参数资料
型号: NUP4302MR6T1G
厂商: ON Semiconductor
文件页数: 2/4页
文件大小: 0K
描述: IC DIODE ARRAY SCHOTTKY TSOP6
标准包装: 1
电压 - 反向隔离(标准值): 25V
电压 - 击穿: 30V
电极标记: 4 通道阵列 - 双向
安装类型: 表面贴装
封装/外壳: SC-74,SOT-457
供应商设备封装: 6-TSOP
包装: 标准包装
其它名称: NUP4302MR6T1GOSDKR
NUP4302MR6
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Peak Reverse Breakdown Voltage
Forward Power Dissipation (T A = 25 ° C)
Forward Continuous Current
Junction Operating Temperature
Storage Temperature Range
Symbol
V BR
P F
I F
T J
T stg
Value
30
225
200
? 55 to +125
? 55 to +150
Unit
V
mW
mA
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Breakdown Voltage
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Forward Voltage
Total Capacitance
Reverse Recovery Time
V BR
I R
V F
V F
V F
V F
C T
t rr
I R = 100 m A
V R = 25 V
I F = 0.1 mAdc
I F = 1.0 mAdc
I F = 10 mAdc
I F = 100 mAdc
V R = 0 V, f = 1.0 MHz, I/O to Ground
V R = 0 V, f = 1.0 MHz, I/O to I/O
I F = I R = 10 mA, I R(REC) = 1.0 mA (Figure 1)
30
30
0.28
0.35
0.45
1.00
28
18
5.0
V
m A
V
V
V
V
pF
ns
820 W
+10 V
2k
100 m H
I F
0.1 m F
t r
t p
t
I F
0.1 m F
10%
t rr
t
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE
V R
90%
INPUT SIGNAL
I R
i R(REC) = 1 mA
OUTPUT PULSE
(I F = I R = 10 mA; measured
at i R(REC) = 1 mA)
Notes: 1. A 2.0 k W variable resistor adjusted for a Forward Current (I F ) of 10 mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10 mA.
Notes: 3. t p ? t rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
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