参数资料
型号: NUP46V8P5T5G
厂商: ON Semiconductor
文件页数: 2/4页
文件大小: 0K
描述: TVS QUAD ARRAY LOW CAP SOT-953
产品变化通告: Wire Bond Change 01/Dec/2010
标准包装: 8,000
电压 - 反向隔离(标准值): 4.3V
电压 - 击穿: 6.47V
功率(瓦特): 10W
电极标记: 4 通道阵列 - 单向
安装类型: 表面贴装
封装/外壳: SOT-953
供应商设备封装: SOT-953
包装: 带卷 (TR)
NUP46V8P5
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I R V F
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
Q V BR
I F
V F
Z ZT
I ZK
Z ZK
Maximum Temperature Coefficient of V BR
Forward Current
Forward Voltage @ I F
Maximum Zener Impedance @ I ZT
Reverse Current
Maximum Zener Impedance @ I ZK
I PP
Uni-Directional
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Characteristic
Peak Power Dissipation (8 X 20 m s @ T A = 25 ° C) (Note 1)
Thermal Resistance Junction-to-Ambient
Above 25 ° C, Derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Lead Solder Temperature (10 seconds duration)
Human Body Model (HBM)
Machine Model (MM)
Symbol
P PK
R q JA
T Jmax
T J T stg
T L
ESD
Value
10
560
4.5
150
-55 to +150
260
8000
400
Unit
W
° C/W
mW/ ° C
° C
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
Typ Capacitance
Typ Capacitance
Breakdown Voltage
Leakage Current
@ 0 V Bias (pF)
@ 3 V Bias (pF)
Device
V BR @ 1 mA (Volts)
I RM @ V RM
(Note 2)
(Note 2)
NUP46V8P5
Device
Marking
6
Min
6.47
Nom
6.8
Max
7.14
V RWM
4.3
I RWM ( m A)
1.0
Typ
12
Max
15
Typ
6.7
Max
9.5
1. Non-repetitive current per Figure 1.
2. Capacitance of one diode at f = 1 MHz, V R = 0 V, T A = 25 ° C.
http://onsemi.com
2
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