参数资料
型号: NZL5V6ATT1G
厂商: ON Semiconductor
文件页数: 2/4页
文件大小: 0K
描述: TVS ZENER DUAL 5.6V SC75
标准包装: 1
电压 - 反向隔离(标准值): 3V
电压 - 击穿: 5.3V
电极标记: 2 通道阵列 - 单向
安装类型: 表面贴装
封装/外壳: SC-75,SOT-416
供应商设备封装: SC-75,SOT-416
包装: 剪切带 (CT)
其它名称: NZL5V6ATT1GOSCT
NZL5V6ATT1
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3, or 2 and 3)
Symbol
I PP
V C
V RWM
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I F
I
I R V F
I R
V BR
I T
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
Test Current
V C V BR V RWM
I T
V
Q V BR
I F
Maximum Temperature Coefficient of V BR
Forward Current
V F
Z ZT
I ZK
Z ZK
Forward Voltage @ I F
Maximum Zener Impedance @ I ZT
Reverse Current
Maximum Zener Impedance @ I ZK
I PP
Uni ? Directional TVS
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Characteristic
Steady State Power ? 1 Diode (Note 1)
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Symbol
P D
T Jmax
T J T stg
Value
150
150
? 55 to +150
Unit
mW
° C
° C
ESD Discharge
IEC61000 ? 4 ? 2, Air Discharge
IEC61000 ? 4 ? 2, Contact Discharge
V PP
" 15
" 8
kV
Lead Solder Temperature (10 seconds duration)
T L
260
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR ? 4 board with min pad.
ELECTRICAL CHARACTERISTICS
Typical
Breakdown Voltage
V BR @ 1 mA (V)
Leakage Current
I RM @ V RM = 3.0 V
V C @ I PP
(Note 2)
Capacitance
@ 0 V Bias
@ 1 MHz
Max
V F @ I F = 10 mA
Device
NZL5V6
Min
5.3
Nom
5.6
Max
5.9
( m A)
1.0
V C (V)
9.97
I PP (A)
6.11
(pF)
40
(V)
1.25
2. Surge current waveform per Figure 2 and clamping voltage (V C ) per Figure 6.
http://onsemi.com
2
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