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| 型号： | OD-110L |
| 厂商： | Opto Diode Corp |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | IR EMITTER 110MW 850NM |
| 标准包装： | 50 |
| 电流 - DC 正向(If)： | 500mA |
| 辐射强度(le)最小值@正向电流： | 110mW @ 500mA |
| 波长： | 850nm |
| 正向电压： | 1.7V |
| 视角： | 7° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-205AD，TO-39-3 金属罐 |
| 包装： | 托盘 |
| 其它名称： | 958-1005 |
SUPER HIGH-POWER GaAlAs IR EMITTERS
OD-110L
FEATURES
? Ultra high optical output
? Four wire bonds on die corners
? Very narrow optical beam
? Standard 3-lead TO-39 hermetic package
? Chip size: 0.026 x 0.026
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two Anode
pins must be externally connected together.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P o
Peak Emission Wavelength, λ P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, V F
Reverse Breakdown Voltage, V R
Rise Time
Fall Time
TEST CONDITIONS
I F = 500mA
I F = 50mA
I F = 50mA
I F = 50mA
I F = 500mA
I R = 10 μ A
I FP = 50mA
I FP = 50mA
MIN
55
5
TYP
110
850
40
7
1.7
30
20
20
MAX
2
UNITS
mW
nm
nm
Deg
Volts
Volts
nsec
nsec
Peak Forward Current (10 μ s, 200Hz)
ABSOLUTEMAXIMUMRATINGSAT25°CCASE
Power Dissipation 1
Continuous Forward Current
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1000mW
500mA
1.5A
5V
260°C
1
Derate per Thermal Derating Curve above 25°C
2 Derate
linearly above 25°C
Thermal Resistance, R THJA
THERMALPARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
1
Thermal Resistance, R THJA 2
-40°C to 100°C
100°C
150°C/W Typical
60°C/W Typical
1
2
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013
相关PDF资料 |
PDF描述 |
|---|---|
| OD-110W | EMITTER IR 140MW 850NM |
| OD-250 | EMITTER IR 250MW 850NM |
| OD-50L | EMITTER IR 50MW 880NM TO-39 |
| OD-50W | EMITTER IR 75MW 880NM TO-39 |
| OD-663 | EMITTER IR 170MW 3DIE 880NM TO66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OD-110LISOLHT | 制造商:OPTODIODE 制造商全称:OPTODIODE 功能描述:HIGH TEMPERATURE GaAlAs IR EMITTERS |
| OD-110W | 功能描述:EMITTER IR 140MW 850NM RoHS:是 类别:光电元件 >> 红外发射极 系列:- 标准包装:1,200 系列:- 电流 - DC 正向(If):100mA 辐射强度(le)最小值@正向电流:27mW/sr @ 100mA 波长:940nm 正向电压:1.6V 视角:40° 方向:顶视图 安装类型:通孔 封装/外壳:径向 包装:带卷 (TR) |
| OD-110WISOLHT | 制造商:OPTODIODE 制造商全称:OPTODIODE 功能描述:HIGH TEMPERATURE WIDE ANGLE IRLED |
| OD111J | 制造商:Ohmite Mfg Co 功能描述:Res Carbon Composition 110 Ohm 5% 0.25W(1/4W) Molded AXL |
| OD111JE | 功能描述:碳质电阻器 1/4W 110 ohms 5% RoHS:否 制造商:Ohmite 电阻:1 kOhms 容差:5 % 功率额定值:250 mW (1/4 W) 电压额定值:250 V 温度系数: 工作温度范围:- 70 C to + 130 C 尺寸:2.5 mm Dia. x 7 mm L 封装:Bulk |
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