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参数资料
| 型号： | OD-850W |
| 厂商： | Opto Diode Corp |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | EMITTER IR 850NM TO-46 |
| 标准包装： | 100 |
| 电流 - DC 正向(If)： | 100mA |
| 辐射强度(le)最小值@正向电流： | 40mW @ 100mA |
| 波长： | 850nm |
| 正向电压： | 1.6V |
| 视角： | 160° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-46-2 透镜顶部金属罐 |
| 包装： | 散装 |
| 其它名称： | 958-1000 |
HIGH-POWER GaAlAs IR EMITTERS
OD-850W
FEATURES
? High optical output
? 850nm peak emission
? Hermetically sealed TO-46 package
? Wide emision angle to cover a large area
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Caps are
welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P o
Peak Emission Wavelength, λ P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, V F
Reverse Breakdown Voltage, V R
Rise Time
Fall Time
TEST CONDITIONS
I F = 100mA
I F = 20mA
I F = 20mA
I F = 20mA
I F = 100mA
I R = 10 μ A
I FP = 50mA
I FP = 50mA
MIN
30
70
5
TYP
40
850
40
80
1.6
30
20
20
MAX
2
UNITS
mW
nm
nm
Deg
Volts
Volts
nsec
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
Continuous Forward Current
Peak Forward Current (10 μ s, 200Hz) 1
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
200mW
100mA
300mA
5V
260°C
1
Derate per Thermal Derating Curve above 25°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
-40°C to 100°C
100°C
Thermal Resistance, R THJA
1
400°C/W Typical
Thermal Resistance, R THJA 2
135°C/W Typical
1
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2 Air
circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
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