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参数资料
| 型号： | OM150L120CMD |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 1200伏150A相腿高可靠性CERMOD IGBT功率模块 |
| 文件页数： | 1/2页 |
| 文件大小： | 36K |
| 代理商： | OM150L120CMD |
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246,www.omnirel.com
12/9/98
Rev.03
1
ELECTRICAL CHARACTERISTICS: OM150F120CMA (Tc= 25
°
C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, V
CE
=0V
Zero Gate Voltage Drain Current, V
GE
=0, V
CE
=1200V
Gate Emitter Leakage Current, V
GE
=+/-15V, V
CE
=0V
ON CHARACTERISTICS
Gate Threshold Voltage, V
CE
=V
GE,
I
C
=6mA
Collector Emitter Saturation Voltage, V
GE
=15V, IC=150A
Symbol
Min.
Typ.
Max
Unit
V
CES
I
CES
I
GES
1200
V
μ
A
μ
A
2
100
V
GE(TH)
V
CE(SAT)
4.5
6.5
3.0
V
V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
Input Capacitance
Output Capacitance
Rev. Transfer Capacitance
V
CE
=5V, I
C
=150A
V
GE
=0
V
CE
=25V
f=1.0MHz
gfs
Cies
Coes
Cres
17
S
nF
nF
nF
14
1.75
1.2
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-on Losses
t(on)
tr
Eon
400
nS
nS
mJ
V
CC
= 600V, I
C
=150A
140
V
GE
=+15/-10V, R
G
=4.7
L=100
μ
H
Turn-off Delay Time
Fall Time
Turn-off Losses
td(off)
tf
Eoff
800
nS
nS
mJ
100
DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
=150A, Tj=25
°
C
Tj=125
°
C
V
R
=600V, Tj=25
°
C
I
F
=150A, Tj=125
°
C
dI/dt=-1500A/
μ
S Tj=25
°
C
V
F
2.8
2.3
16
33
V
Qrr
μ
C
Reverse Recovery
Characteristics
Irr
A
Tj=125
°
C
Tj=25
°
C
Tj=125
°
C
trr
200
400
nS
THERMAL AND MECHANICAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)
Thermal Resistance, Junction to Case (Per Diode)
Maximum Junction Temperature
Isolation Voltage
Screw Torque Mounting
Screw Torque (M6) Terminals
Screw Torque (M3) Terminals
Module Weight
R
thJC
R
thJC
T
jMAX
Vis
RMS
-
0.11
0.20
150
2500
20
15
8
°
C/W
°
C/W
°
C
V
in-lb
in-lb
in-lb
Grams
15
10
6
320
-
-
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