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参数资料
| 型号： | OM6026SA |
| 元件分类： | 功率晶体管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N沟道的PowerTrench MOSFET的 |
| 文件页数： | 3/4页 |
| 文件大小： | 44K |
| 代理商： | OM6026SA |
ELECTRICAL CHARACTERISTICS:
(
T
C
= 25°C unless otherwise noted)
STATIC P/N OM6019SA
Parameter
Min.
BV
DSS
Drain-Source Breakdown
400
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
ELECTRICAL CHARACTERISTICS:
(
T
C
= 25°C unless otherwise noted)
STATIC P/N OM6020SA
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
500
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
Typ. Max. Units Test Conditions
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= +20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= +20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
4.0
100
- 100
0.25
V
nA
nA
mA
4.0
100
- 100
0.25
V
nA
nA
mA
0.1
0.1
0.2
1.0
mA
0.2
1.0
mA
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
15
A
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
13
A
2.0
2.64
V
V
GS
= 10 V, I
D
= 8.0 A
2.1
2.94
V
V
GS
= 10 V, I
D
= 7.0 A
R
DS(on)
0.25
.33
V
GS
= 10 V, I
D
= 8.0 A
R
DS(on)
0.3
0.42
V
GS
= 10 V, I
D
= 7.0 A
R
DS(on)
0.50 0.66
V
GS
= 10 V, I
D
= 8.0 A,
T
C
= 125 C
R
DS(on)
0.66
0.88
V
GS
= 10 V, I
D
= 7.0 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 8.0 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
@
8.0 A
R
g
=5.0
W
, V
GS
=10V
(MOSFET switching times are
essentially independent of
operating temperature.)
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 7.0 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5.0
W
, V
GS
= 10 V
(MOSFET switching times are
essentially independent of
operating temperature.)
2900
450
150
30
40
80
30
2600
280
40
30
46
75
31
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
- 15
A
Modified MOSPOWER
- 13
A
Modified MOSPOWER
symbol showing
symbol showing
- 60
A
the integral P-N
- 52
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
T
J
= 100 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 1.6
V
- 1.4
V
t
rr
Reverse Recovery Time
600
ns
t
rr
Reverse Recovery Time
700
ns
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
3
O
3
G
D
S
G
D
S
(
W
)
(
W
)
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