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参数资料
| 型号： | OM6026SW |
| 英文描述： | SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits |
| 中文描述： | 500V单N沟道高可靠性的D3的封装MOSFET的 |
| 文件页数： | 2/4页 |
| 文件大小： | 44K |
| 代理商： | OM6026SW |
3
O
3
ELECTRICAL CHARACTERISTICS:
(
T
C
= 25°C unless otherwise noted)
STATIC P/N OM6017SA
Parameter
Min.
BV
DSS
Drain-Source Breakdown
100
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
ELECTRICAL CHARACTERISTICS:
(
T
C
= 25°C unless otherwise noted)
STATIC P/N OM6018SA
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
200
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
GSSR
Gate-Body Leakage Reverse
I
DSS
Zero Gate Voltage Drain
Current
Typ. Max. Units Test Conditions
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= +20 V
V
GS
= -20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= + 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
4.0
100
- 100
0.25
V
nA
nA
mA
4.0
100
-100
0.25
V
nA
nA
mA
0.1
0.1
0.2
1.0
mA
0.2
1.0
mA
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
35
A
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
30
A
1.1
1.3
V
V
GS
= 10 V, I
D
= 20 A
1.36
1.60
V
V
GS
= 10 V, I
D
= 16 A
R
DS(on)
0.55 0.65
V
GS
= 10 V, I
D
= 20 A
R
DS(on)
.085
.100
V
GS
= 10 V, I
D
= 16 A
R
DS(on)
.09
0.11
V
GS
= 10 V, I
D
= 20 A,
T
C
= 125 C
R
DS(on)
0.14
0.17
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
9.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 20 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
20 A
R
g
= 5.0
W
, V
G
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 16 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
16 A
R
g
= 5.0
W
,V
GS
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
2700
1300
470
28
45
100
50
2400
600
250
25
60
85
38
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
- 40
A
Modified MOSPOWER
- 30
A
Modified MOSPOWER
symbol showing
symbol showing
- 160
A
the integral P-N
- 120
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 2.5
V
- 2
V
t
rr
Reverse Recovery Time
400
ns
t
rr
Reverse Recovery Time
350
ns
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
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|---|---|
| OM6027SC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE |
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| OM6027SCT | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 10A 3PIN TO-258AA - Bulk |
| OM6028SC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-258AA |
| OM6031SC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:500V Single N-Channel Hi-Rel MOSFET in a TO-259AA package |
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