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参数资料
| 型号： | OMS305 |
| 英文描述： | 50V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| 中文描述： | 50V高可靠性多芯片MOSFET的三相桥模块的型号：MP - 3封装 |
| 文件页数： | 2/4页 |
| 文件大小： | 38K |
| 代理商： | OMS305 |
2.1 - 50
2.1
OMS305, OMS305A, OMS405
ELECTRICAL CHARACTERISTICS:
OMS305
(T
C
= 25° unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 μA, V
GS
= 0
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
V
BRDSS
I
DSS
50
-
-
V
-
-
25.0
μA
V
DS
= Max. Rat. x 0.8, T
C
= 70°C
-
-
500.0
μA
Gate-Body Leakage, V
GS
= ±12 V
I
GSS
-
-
±500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0 A
Static Drain-Source On-Resistance
T
C
= 70°C
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
V
GSth
R
DSon
2.0
-
4.0
V
-
-
0.1
-
-
0.2
I
Don
15
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 9.0A
g
fs
C
iss
C
oss
C
rss
3.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
V
GS
= 0,
f = 1.0 mHz
-
-
650
pF
Output Capacitance
-
-
450
pF
Reverse Transfer Capacitance
-
-
280
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
don
t
r
t
doff
t
f
-
-
30
ns
Rise Time
V
DD
= 30 V, I
D
=
3 A,
R
GS
= 50 , V
GS
= 10 V
-
-
85
ns
Turn-Off Delay Time
-
-
90
ns
Fall Time
-
-
110
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
I
SDM
*
V
SD
t
rr
Q
rr
-
-
14
A
Source - Drain Current Pulsed
-
-
56
A
Forward On-Voltage
I
SD
= 28 A, V
GS
= 0
-
-
1.8
V
Reverse Recovery Time
I
SD
= 13 A, di/dt = 100 A/μSec
-
120
-
ns
Reverse Recovered Charge
-
0.15
-
μC
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
T
cr
9.0
10
11
m
Temperature Coefficient, -40°C to +70°C
-
100
-
ppm
* Indicates Pulse Test 300 μsec, Duty Cycle 1.5%
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
OMS305
OMS305A
OMS405
Units
V
DS
Drain-Source Voltage
50
50
50
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 m )
50
50
50
V
I
D
@ T
C
= 25°C
Continuous Drain Current
15
25
45
A
I
D
@ T
C
= 70°C
Continuous Drain Current
11
16
45
A
I
DM
Pulsed Drain Current
1
56
100
140
A
P
D
@ T
C
= 25°C
Maximum Power Dissipation
2
20
50
50
W
P
D
@ T
C
= 70°C
Maximum Power Dissipation
2
11
18
27
W
Junction-To-Case Linear Derating Factor
0.2
0.33
0.5
W/°C
Thermal Resistance Junction-To-Case
5.0
3.0
2.0
°C/W
Note 1:
Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2:
Maximum Junction Temperature equal to 125°C.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OMS405 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:50V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS410 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE |
| OMS410A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE |
| OMS420 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:200V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
| OMS420A | 制造商:未知厂家 制造商全称:未知厂家 功能描述:200V Hi-Rel Multi-Chip MOSFET 3-Phase Bridge Module in a MP-3 package |
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