参数资料
型号: OP113ESZ-REEL
厂商: Analog Devices Inc
文件页数: 2/24页
文件大小: 0K
描述: IC OPAMP GP 3.4MHZ LN 40MA 8SOIC
标准包装: 2,500
放大器类型: 通用
电路数: 1
转换速率: 1.2 V/µs
增益带宽积: 3.4MHz
电流 - 输入偏压: 240nA
电压 - 输入偏移: 75µV
电流 - 电源: 3mA
电流 - 输出 / 通道: 40mA
电压 - 电源,单路/双路(±): 4 V ~ 36 V,±2 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
OP113/OP213/OP413
Rev. F | Page 10 of 24
70
50
125
65
55
–50
60
75
50
25
0
–25
P
HAS
E
M
A
R
G
IN
(
D
eg
rees
)
5
1
4
2
3
G
AI
N
BANDW
IDT
H
P
R
O
D
UCT
(
M
Hz
)
–75
GBW
θm
V+ = 5V
V– = 0V
TEMPERATURE (°C)
100
0
02
86
-02
2
Figure 23. Gain Bandwidth Product and Phase Margin vs. Temperature @ 5 V
30
15
0
10
5
20
25
FREQUENCY (Hz)
V
O
L
T
AG
E
NO
IS
E
DE
NS
IT
Y
(
n
V
/
Hz
)
1
10
100
1k
TA = 25°C
VS = ±15V
00
28
6-
0
23
Figure 24. Voltage Noise Density vs. Frequency
140
100
0
120
60
80
20
40
FREQUENCY (Hz)
CO
M
O
N
-M
O
D
E
RE
JE
C
T
IO
N
(
d
B)
100
1k
10k
100k
1M
V+ = 5V
V– = 0V
TA = 25°C
00
28
6-
0
24
Figure 25. Common-Mode Rejection vs. Frequency @ 5 V
70
50
125
65
55
–50
60
75
50
25
0
–25
P
H
AS
E
M
A
RG
IN
(D
eg
rees
)
5
1
4
2
3
G
A
IN
B
ANDW
IDT
H
P
RO
DU
CT
(
M
H
z)
–75
θm
TEMPERATURE (°C)
100
VS = ±15V
GBW
00
28
6-
0
25
Figure 26. Gain Bandwidth Product and Phase Margin vs. Temperature @ ±15 V
3.0
1.5
0
1.0
0.5
2.0
2.5
FREQUENCY (Hz)
CUR
RE
NT
NO
IS
E
DE
NS
IT
Y
(
p
A/
Hz
)
1
10
100
1k
TA = 25°C
VS = ±15V
00
28
6-
02
6
Figure 27. Current Noise Density vs. Frequency
140
100
0
1M
1k
100k
10k
100
120
60
80
20
40
FREQUENCY (Hz)
CO
M
O
N
-M
O
DE
RE
JE
CT
IO
N
(d
B)
TA = 25°C
VS = ±15V
00
28
6-
0
27
Figure 28. Common-Mode Rejection vs. Frequency @ ±15 V
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