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参数资料
| 型号： | OP140C |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | DIODE IR PLASTIC GAAS SIDE LOOK |
| 产品培训模块： | LED Thermal Management |
| 标准包装： | 1 |
| 电流 - DC 正向(If)： | 50mA |
| 波长： | 935nm |
| 正向电压： | 1.6V |
| 视角： | 40° |
| 方向： | 侧视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | 径向 |
| 包装： | 散装 |
Plastic Infrared Emitting Diode
OP140, OP145 Series
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current
-40 o C to +100 o C
2.0 V
50 mA
3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
(1)
260° C
Power Dissipation
(2)
100 mW
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
E E (APT)
Apertured Radiant Incidence
OP140A, OP145A
OP140B, OP145B
OP140C, OP145C
OP140D, OP145D
0.40
0.30
0.20
0.10
-
-
-
-
-
0.55
0.40
-
mW/cm 2 I F = 20 mA (3)
V F
I R
λ P
B
?λ P / ? T
Forward Voltage
Reverse Current
Wavelength at Peak Emission
Spectral Bandwidth between Half Power
Points
Spectral Shift with Temperature
-
-
-
-
-
-
-
935
50
±0.30
1.60
100
-
-
-
V
μA
nm
nm
nm/°C
I F = 20 mA
V R = 2.0 V
I F = 10 mA
I F = 10 mA
I F = Constant
θ HP
Emission Angle at Half Power Points
-
40
-
Degree I F = 20 mA
t r
t f
Output Rise Time
Output Fall Time
-
-
1000
500
-
-
ns
ns
I F(PK) =100 mA, PW=10 μs, and
D.C.=10.0%
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly 1.33 mW/° C above 25° C.
3. E E(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.180” (4.57 mm) in diameter
perpendicular to and centered on the mechanical axis of the lens and 0.653” (6.60 mm) from the lens tip. E E(APT) is not necessarily
uniform within the measured area.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A
04/2012
Page 3 of 5
相关PDF资料 |
PDF描述 |
|---|---|
| OP145D | DIODE IR PLASTIC GAAS SIDE LOOK |
| OP166W | DIODE IR PLASTIC GAAS FLAT T-1 |
| OP224S | DIODE IR HERMETIC GAAIAS PILL |
| OP230WPS | DIODE INFRARED EMITTING HERMETIC |
| OP234W | DIODE IR HS HP GAAIAS FLAT TO-46 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP140D | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP141A | 功能描述:红外发射源 Infrared 935nm 828-OP141B RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP141B | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP141C | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP142/883C | 制造商:Analog Devices 功能描述: |
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