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参数资料
| 型号： | OP140D |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 红外LED |
| 英文描述： | GaAs Plastic Infrared Emitting Diodes |
| 中文描述： | 1.58 mm, 1 ELEMENT, INFRARED LED, 935 nm |
| 文件页数： | 1/2页 |
| 文件大小： | 172K |
| 代理商： | OP140D |
Fea ures
Wide irradiance pattern
Selected to specific on-line intensity
ranges
Low cost, miniature plastic side-
looking package
Mechanically and spectrally matched
to the OP550 series of
phototransistors and the OP560 series
of photodarlingtons
De scrip ion
The OP140 series devices are 935nm
high intensity gallium arsenide infrared
emitting diodes molded in IR
transmissive plastic side-looking
packages. The side looking packages
are for use in PC board mounted slotted
switches or as an easy mount PC board
interrupter.
Re places
OP140SL series
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Con inu ous For ward Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur ent (1
μ
s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.33 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average apertured radiant incidence upon a sensing area
0.180" (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the
lens and 0.653" (16.6 mm) from the lens tip. E
e(APT)
is not necessarily uniform within the
measured area.
Prod uct Bul e in OP140A
May 1996
GaAs Plas ic In ra ed Emit ing Di odes
Types OP140A, OP140B, OP140C, OP140D
2-10
相关PDF资料 |
PDF描述 |
|---|---|
| OP145A | GaAs Plastic Infrared Emitting Diodes |
| OP145B | GaAs Plastic Infrared Emitting Diodes |
| OP145C | GaAs Plastic Infrared Emitting Diodes |
| OP145D | GaAs Plastic Infrared Emitting Diodes |
| OP160SL | GAAS PLASTIC INFRARED EMITTING DIODES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP141A | 功能描述:红外发射源 Infrared 935nm 828-OP141B RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP141B | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP141C | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP142/883C | 制造商:Analog Devices 功能描述: |
| OP145A | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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