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参数资料
| 型号： | OP166A |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 红外LED |
| 英文描述： | Plastic Infrared Emitting Diode |
| 中文描述： | 3 mm, 1 ELEMENT, INFRARED LED, 935 nm |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 397K |
| 代理商： | OP166A |
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 07/06
Page 3 of 4
Plastic Infrared Emitting Diode
OP165, OP166 Series
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX UNITS
TEST CONDITIONS
Input Diode
E
E (APT)
Apertured Radiant Incidence
OP165A, OP166A
1.95
-
-
mW/cm
2
I
F
= 20 mA
(3)
P
O
Radiant Power Output
OP165W, OP166W
0.50
-
-
mW
I
F
= 20 mA
V
F
Forward Voltage
-
-
1.60
V
I
F
= 20 mA
I
R
Reverse Current
-
-
100
μA
V
R
= 2 V
λ
P
Wavelength at Peak Emission
-
935
-
nm
I
F
= 10 mA
B
Spectral Bandwidth between Half Power
Points
-
50
-
nm
I
F
= 10 mA
λ
P
/
T
Spectral Shift with Temperature
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
-
±0.30
-
-
nm/°C I
F
= Constant
θ
HP
Emission Angle at Half Power Points
OP165, OP166 (A, B, C, D)
OP165W, OP166W
-
-
18
90
-
-
Degree I
F
= 20 mA
t
r
Output Rise Time
-
1000
-
ns
t
f
Output Fall Time
-
500
-
ns
I
F(PK)
=100 mA, PW=10 μs, D.C.=10.0%
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Storage and Operating Temperature Range
-40
o
C to +100
o
C
Reverse Voltage
2.0 V
Continuous Forward Current
50 mA
Peak Forward Current (1 μs pulse width, 300 pps)
3.0 A
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
260° C
(1)
Power Dissipation
100 mW
(2)
相关PDF资料 |
PDF描述 |
|---|---|
| OP166B | Plastic Infrared Emitting Diode |
| OP166C | Plastic Infrared Emitting Diode |
| OP166D | Plastic Infrared Emitting Diode |
| OP166W | Plastic Infrared Emitting Diode |
| OP168F | Plastic Infrared Emitting Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP166B | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP166C | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP166D | 功能描述:红外发射源 Infrared 935nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP166P | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| OP166S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
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