参数资料
型号: OP183GSZ-REEL
厂商: Analog Devices Inc
文件页数: 13/16页
文件大小: 0K
描述: IC OPAMP GP 5MHZ LN 50MA 8SOIC
产品变化通告: Product Discontinuance 27/Oct/2011
标准包装: 2,500
放大器类型: 通用
电路数: 1
转换速率: 15 V/µs
增益带宽积: 5MHz
电流 - 输入偏压: 300nA
电压 - 输入偏移: 10µV
电流 - 电源: 1.2mA
电流 - 输出 / 通道: 50mA
电压 - 电源,单路/双路(±): 3 V ~ 36 V,±1.5 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
OP183
Rev. D | Page 6 of 16
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Rating
Supply Voltage
±18 V
Input Voltage
±18 V
Differential Input Voltage1
±7 V
Output Short-Circuit Duration to GND
Indefinite
Storage Temperature Range
S Package
65°C to +150°C
Operating Temperature Range
OP183
40°C to +85°C
Junction Temperature Range
S Package
65°C to +150°C
Lead Temperature Range (Soldering 60 sec)
300°C
1 For supply voltages less than ±7 V, the absolute maximum input voltage is
equal to the supply voltage. Maximum input current should not exceed
2 mA.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Absolute maximum ratings apply to packaged parts, unless
otherwise noted.
Table 5.
Package Type
θJA1
θJC
Units
8-Lead SOIC (S)
158
43
°C/W
1 θJA is specified for worst-case conditions; in other words, θJA is specified for
device soldered in circuit board for SOIC packages.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
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