参数资料
型号: OP184FSZ-REEL7
厂商: Analog Devices Inc
文件页数: 21/24页
文件大小: 0K
描述: IC OPAMP GP R-R 4.25MHZ LN 8SOIC
设计资源: Variable Gain Noninverting Amplifier Using AD5292 and OP184 (CN0112)
Variable Gain Inverting Amplifier Using AD5292 and OP184 (CN0113)
Programmable High Voltage Source with Boosted Output Current Using AD5292, OP184, and MOSFETs (CN0115)
Low-Noise Microwave fractional-N PLL using active loop filter and RF prescaler (CN0174)
标准包装: 1,000
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 4 V/µs
增益带宽积: 4.25MHz
电流 - 输入偏压: 80nA
电压 - 输入偏移: 175µV
电流 - 电源: 2.25mA
电流 - 输出 / 通道: 10mA
电压 - 电源,单路/双路(±): 3 V ~ 36 V,±1.5 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
其它名称: OP184FSZ-REEL7-ND
OP184FSZ-REEL7TR
OP184/OP284/OP484
Rev. J | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Rating
Supply Voltage
±18 V
Input Voltage
±18 V
±0.6 V
Output Short-Circuit Duration to GND
Indefinite
Storage Temperature Range
P-Suffix, S-Suffix Packages
65°C to +150°C
Operating Temperature Range
OP184/OP284/OP484E/OP484F
40°C to +125°C
Junction Temperature Range
P-Suffix, S-Suffix Packages
65°C to +150°C
Lead Temperature
(Soldering 60 sec)
300°C
1
For input voltages greater than 0.6 V, the input current should be limited to
less than 5 mA to prevent degradation or destruction of the input devices.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Absolute maximum ratings apply to both DICE and packaged
parts, unless otherwise noted.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions; that is, θJA is
specified for a device in socket for PDIP. θJA is specified for a
device soldered in the circuit board for SOIC packages.
Table 6. Thermal Resistance
Package Type
θJA
θJC
Unit
8-Lead PDIP (P-Suffix)
103
43
°C/W
8-Lead SOIC (S-Suffix)
158
43
°C/W
14-Lead PDIP (P-Suffix)
83
39
°C/W
14-Lead SOIC (S-Suffix)
92
27
°C/W
ESD CAUTION
R3
Q1
–IN
+IN
QL1
QL2
Q4
Q3
Q2
QB5
QB6
RB2
QB3
R1
Q5
R2
QB4
JB2
QB1
N+
CB1
P+
M
QB2
CC1
Q9
Q7
Q11
Q8
Q6
Q10
Q12
QB7
QB8
QB9
RB1
JB1
TP
R4
R5
R6
RB3
FF
C
R7
R8
Q13
Q14
R10
Q15
RB4
QB10
CC2
C O
Q17
Q16
R11
Q18
VCC
OUT
VEE
R9
00293-
004
Figure 4. Simplified Schematic
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