- 您现在的位置：买卖IC网 > Datasheet目录495 > OP265WPS (TT Electronics/Optek Technology)DIODE INFRARED EMITTING PLASTIC Datasheet资料下载
参数资料
| 型号： | OP265WPS |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | DIODE INFRARED EMITTING PLASTIC |
| 产品培训模块： | LED Thermal Management |
| 标准包装： | 1 |
| 电流 - DC 正向(If)： | 50mA |
| 波长： | 850nm |
| 正向电压： | 1.8V |
| 视角： | 120° |
| 方向： | 顶视图 |
| 安装类型： | 通孔 |
| 封装/外壳： | T-1 |
| 其它名称： | 365-1006 |
Plastic Infrared Emitting Diode
OP265WPS
Absolute Maximum Ratings (T A = 25° C unless otherwise noted)
Storage and Operating Temperature Range
Reverse Voltage
Continuous Forward Current
Peak Forward Current (1 μs pulse width, 300 pps)
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
-40 o C to +100 o C
2.0 V
50 mA
3.0 A
260° C (1)
100 mW (2)
Notes:
1. RMA flux is recommended. Duration can be extended to 10 second maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly at 1.33 mW/° C above 25° C.
3. E E(APT) is a measurement of the average apertured radiant incidence upon a sensing area 0.081” (2.06 mm) in diameter, perpendicular
to and centered on the mechanical axis of the lens and 0.590” (14.99 mm) from the measurement surface. E E(APT) is not necessarily
uniform within the measured area.
Electrical Characteristics (T A = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
E E (APT)
Apertured Radiant Incidence
2.70
-
-
mW/cm 2 I F = 20 mA (3)
V F
I R
λ P
B
Forward Voltage
Reverse Current
Wavelength at Peak Emission
Spectral Bandwidth between Half Power
Points
-
-
-
-
-
-
850
-
1.80
20
-
-
V
μA
nm
nm
I F = 20 mA
V R = 2 V
I F = 10 mA
I F = 20 mA
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A 07/06
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
相关PDF资料 |
PDF描述 |
|---|---|
| OP266W | LED IR 3MM 890NM PLASTIC |
| OP268FPS | DIODE INFRARED EMITTING PLASTIC |
| OP293B | LED IR 890NM PLASTIC WIDE TO-46 |
| OP301SL | PHOTOTRNS SILICN NPN HERMET PILL |
| OP501DA | PHOTODARLINGTON NPN BLK 0805 SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP266 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:Plastic Infrared Emitting Diode |
| OP266-905 | 制造商:TT Electronics / OPTEK Technology 功能描述: |
| OP266A | 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP266AA | 功能描述:Infrared (IR) Emitter 850nm 1.8V 50mA 5.5mW/cm2 @ 20mA 18° Radial 制造商:tt electronics/optek technology 系列:OP266AA 包装:散装 零件状态:在售 类型:红外（IR） 电流 - DC 正向（If）:50mA 不同 If 时的辐射强度（Ie）（最小值）:5.5mW/cm2 @ 20mA 波长:850nm 电压 - 正向（Vf）（典型值）:1.8V 视角:18° 朝向:顶视图 工作温度:-40°C ~ 100°C（TA） 安装类型:通孔 封装/外壳:径向 标准包装:100 |
| OP266AC | 功能描述:Infrared (IR) Emitter 850nm 1.8V 50mA 11.5mW/cm2 @ 20mA 18° Radial 制造商:tt electronics/optek technology 系列:OP266AA 包装:散装 零件状态:在售 类型:红外（IR） 电流 - DC 正向（If）:50mA 不同 If 时的辐射强度（Ie）（最小值）:11.5mW/cm2 @ 20mA 波长:850nm 电压 - 正向（Vf）（典型值）:1.8V 视角:18° 朝向:顶视图 工作温度:-40°C ~ 100°C（TA） 安装类型:通孔 封装/外壳:径向 标准包装:100 |
发布紧急采购，3分钟左右您将得到回复。