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参数资料
| 型号： | OP268FC |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 红外LED |
| 英文描述： | Plastic Infrared Emitting Diode |
| 中文描述： | 4.06 mm, 1 ELEMENT, INFRARED LED, 890 nm |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 3/6页 |
| 文件大小： | 288K |
| 代理商： | OP268FC |
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. —
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A 06/07
Page 3 of 6
Plastic Infrared Emitting Diode
OP168F, OP169, OP268F, OP269 Series
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Storage and Operating Temperature Range
-40
o
C to +100
o
C
Reverse Voltage
2.0 V
Continuous Forward Current
50 mA
Peak Forward Current (1
μ
s pulse width, 300 pps)
OP168, OP169, OP268, OP269 (A, B, C)
OP268FPS
3.0 A
100 mA
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
(1)
260° C
Power Dissipation
(2)
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
100 mW
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force
may be applied to the leads when soldering.
2. Derate linearly 1.33 mW/° C above 25° C.
3. For OP168 (FA, FB, FC) and OP268 (FA, FB, FC), E
E(APT)
is a measurement of the average apertured radiant energy incident upon a
sensing area 0.081” (2.06 mm) in diameter perpendicular to and centered on the mechanical axis of the lens and 0.400” (10.16 mm)
from the measurement surface. For OP169 (A, B, C) and OP269 (A, B, C), E
E(APT)
is a measurement of the average apertured radiant
energy incident upon a sensing area 0.180” (4.57 mm) in diameter perpendicular to and centered on the mechanical axis of the lens
and 0.653” (16.6 mm) from the lens tip. NOTE: E
is a measurement of the
average
radiant intensity within the cone formed by
the above conditions. E
E(APT)
is not necessarily uniform within the measured area.
SYMBOL
PARAMETER
MIN
TYP
MAX UNITS
TEST CONDITIONS
Input Diode
E
E (APT)
(3)
Apertured Radiant Incidence
OP168FA
OP168FB
OP168FC
OP169A
OP169B
OP169C
OP268FA
OP268FB
OP268FC
OP268FPS
OP269A
OP269B
OP269C
0.48
0.43
0.27
0.18
0.11
0.03
0.64
0.45
0.36
0.10
0.58
0.42
0.34
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.73
-
-
0.22
-
-
0.99
-
0.90
-
0.82
-
mW/cm
2
I
F
= 20 mA
Aperture = .081” dia.
Distance = .400” from tip of lens to
aperture surface
V
F
Forward Voltage
OP168, OP169
OP268, OP269
OP268FPS
-
-
-
-
-
-
1.40
1.50
1.80
V
I
F
= 20 mA
I
R
Reverse Current
OP168, OP169, OP268, OP269
OP268FPS
-
-
-
-
100
20
μA
V
R
= 2.0 V
λ
P
Wavelength at Peak Emission
OP168, OP169
OP268, OP269
OP268FPS
-
-
-
935
890
850
-
-
-
nm
I
F
= 20 mA
相关PDF资料 |
PDF描述 |
|---|---|
| OP268FPS | Plastic Infrared Emitting Diode |
| OP269A | Plastic Infrared Emitting Diode |
| OP269B | Plastic Infrared Emitting Diode |
| OP269C | Plastic Infrared Emitting Diode |
| OP169SL | GaAs PLASTIC INFRARED EMITTING DIODES |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP268FPS | 功能描述:红外发射源 Point Source 850nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP269 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:GAALAS PLASTIC INFRARED EMITTING DIODES |
| OP269-003 | 制造商:TT Electronics / OPTEK Technology 功能描述: |
| OP269A | 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP269B | 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
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