- 您现在的位置：买卖IC网 > PDF目录383687 > OP280 (OPTEK TECHNOLOGY INC) Infrared Light Emitting Diode in SMT Plastic Package PDF资料下载
参数资料
| 型号： | OP280 |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 红外LED |
| 英文描述： | Infrared Light Emitting Diode in SMT Plastic Package |
| 中文描述： | 2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm |
| 封装： | ROHS COMPLIANT, PLASTIC, SMD, LCC-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 261K |
| 代理商： | OP280 |
SMT Infrared LED
OP280
OPTEK Technology Inc.—
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range
-40° C to +85° C
Operating Temperature Range
-25° C to +85° C
260° C
(1)
Lead Soldering Temperature
Reverse Voltage
30 V
Continuous Forward Current
50 mA
Power Dissipation
130 mW
(2)
Notes:
1.
2.
Solder time less than 5 seconds at temperature extreme.
De-rate linearly at 2.17 mW/° C above 25° C.
SYMBOL
PARAMETER
MIN
MAX
UNITS
CONDITIONS
E
e(APT)
Apertured Radiant Incidence
0.5
mW/cm
2
I
F
= 20mA
(3)
I
F
= 20mA
V
F
Forward Voltage
1.5
V
I
R
Reverse Current
100
μA
V
R
= 2.0V
λ
P
Peak Emission Wavelength
nm
I
F
= 10mA
t
r
, t
f
Rise and Fall Time
500
ns
I
F(PEAK)
= 100mA, PW = 10μs, 10% D.C.
TYP
890
Θ
HP
Emission Angle at Half Power Points
100
Deg.
I
F
= 20mA
3.
E
e(APT)
is a measurement of the apertured radiant incidence upon a sensing area 0.081” (2.06mm) in diameter, perpendicular to and cen-
tered on the mechanical axis of the lens, and 0.590” (14.99mm) from the measurement surface. E
e(APT)
is not necessarily uniform within
the measured area.
Issue 1.1 07.05
Page 2 of 3
1.0
1.1
1.2
1.3
1.4
1.5
F
Relative Radiant Intensity vs.
Forward Current vs. Temperature
0
10
20
30
40
50
Forward Current (mA)
R
100%
150%
200%
250%
300%
350%
Forward Voltage vs. Forward
Current vs. Temperature
50%
0
10
20
30
40
50
Forward Current (mA)
Normalized at I
F
= 20mA,
T
A
= 20
°
C. Temperatures
stepped in 20
°
C Increments
100
°
C
-40
°
C
Temperatures stepped
in 20
°
C Increments
-40
°
C
100
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| OP290 | GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极管,峰值前向电流5.0A) |
| OP291 | GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极管,峰值前向电流2.0A) |
| OP292 | GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极管,峰值前向电流1.0A) |
| OP293A | GaAlAs Plastic Infrared Emitting Diodes |
| OP293C | GaAlAs Plastic Infrared Emitting Diodes |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP280 | 制造商:TT Electronics / OPTEK Technology 功能描述:IR Emitting Diode 制造商:TT Electronics / OPTEK Technology 功能描述:IR EMITTER, 880NM, 2.4MM, LCC-2, SMD |
| OP280D | 制造商:TT Electronics / OPTEK Technology 功能描述: |
| OP280K | 功能描述:红外发射源 IR LED 850nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP280KT | 功能描述:红外发射源 IR LED 850nm Reverse Polerity RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP280PS | 功能描述:红外发射源 IR LED 875nm Point Source RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
发布紧急采购，3分钟左右您将得到回复。