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| 型号： | OP282GSZ-REEL7 |
| 厂商： | Analog Devices Inc |
| 文件页数： | 10/16页 |
| 文件大小： | 0K |
| 描述： | IC OPAMP JFET 4MHZ DUAL LP 8SOIC |
| 标准包装： | 1,000 |
| 放大器类型： | J-FET |
| 电路数： | 2 |
| 转换速率： | 9 V/µs |
| 增益带宽积： | 4MHz |
| 电流 - 输入偏压： | 3pA |
| 电压 - 输入偏移： | 200µV |
| 电流 - 电源： | 210µA |
| 电流 - 输出 / 通道： | 12mA |
| 电压 - 电源，单路/双路(±)： | 9 V ~ 36 V，±4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 90°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
Data Sheet
OP282/OP482
Rev. I | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
At VS = ±15.0 V, TA = 25°C, unless otherwise noted; applies to both A and G grades.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0.2
3
mV
4.5
mV
0.2
4
mV
6
mV
Input Bias Current
IB
VCM = 0 V
3
100
pA
500
pA
Input Offset Current
IOS
VCM = 0 V
1
50
pA
250
pA
Input Voltage Range
11
+15
V
Common-Mode Rejection Ratio
CMRR
11 V ≤ VCM ≤ +15 V, 40°C ≤ TA ≤ +85°C
70
90
dB
Large-Signal Voltage Gain
AVO
RL = 10 k, VO = ±13.5 V
20
V/mV
RL = 10 k, 40°C ≤ TA ≤ +85°C
15
V/mV
Offset Voltage Drift
ΔVOS/ΔT
10
V/°C
Bias Current Drift
ΔIB/ΔT
8
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 10 k
13.5
13.9
V
Output Voltage Low
VOL
RL = 10 k
13.9
13.5
V
Short-Circuit Limit
ISC
Source
3
10
mA
Sink
12
8
mA
Open-Loop Output Impedance
ZOUT
f = 1 MHz
200
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±4.5 V to ±18 V, 40°C ≤ TA ≤ +85°C
25
316
V/V
Supply Current/Amplifier
ISY
VO = 0 V, 40°C ≤ TA ≤ 85°C
210
250
A
Supply Voltage Range
VS
±4.5
±18
V
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 k
7
9
V/s
Full-Power Bandwidth
BWP
1% distortion
125
kHz
Settling Time
tS
To 0.01%
1.6
s
Gain Bandwidth Product
GBP
4
MHz
Phase Margin
M
55
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
1.3
V p-p
Voltage Noise Density
en
f = 1 kHz
36
nV/√Hz
Current Noise Density
in
0.01
pA/√Hz
1
The input bias and offset currents are characterized at TA = TJ = 85°C. Bias and offset currents are guaranteed but not tested at 40°C.
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