参数资料
型号: OP282GSZ-REEL
厂商: Analog Devices Inc
文件页数: 10/16页
文件大小: 0K
描述: IC OPAMP JFET 4MHZ DUAL LP 8SOIC
标准包装: 2,500
放大器类型: J-FET
电路数: 2
转换速率: 9 V/µs
增益带宽积: 4MHz
电流 - 输入偏压: 3pA
电压 - 输入偏移: 200µV
电流 - 电源: 210µA
电流 - 输出 / 通道: 12mA
电压 - 电源,单路/双路(±): 9 V ~ 36 V,±4.5 V ~ 18 V
工作温度: -40°C ~ 90°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 带卷 (TR)
Data Sheet
OP282/OP482
Rev. I | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
At VS = ±15.0 V, TA = 25°C, unless otherwise noted; applies to both A and G grades.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage
VOS
0.2
3
mV
OP282, 40°C ≤ TA ≤ +85°C
4.5
mV
0.2
4
mV
OP482, 40°C ≤ TA ≤ +85°C
6
mV
Input Bias Current
IB
VCM = 0 V
3
100
pA
VCM = 0 V1
500
pA
Input Offset Current
IOS
VCM = 0 V
1
50
pA
VCM = 0 V1
250
pA
Input Voltage Range
11
+15
V
Common-Mode Rejection Ratio
CMRR
11 V ≤ VCM ≤ +15 V, 40°C ≤ TA ≤ +85°C
70
90
dB
Large-Signal Voltage Gain
AVO
RL = 10 k, VO = ±13.5 V
20
V/mV
RL = 10 k, 40°C ≤ TA ≤ +85°C
15
V/mV
Offset Voltage Drift
ΔVOS/ΔT
10
V/°C
Bias Current Drift
ΔIB/ΔT
8
pA/°C
OUTPUT CHARACTERISTICS
Output Voltage High
VOH
RL = 10 k
13.5
13.9
V
Output Voltage Low
VOL
RL = 10 k
13.9
13.5
V
Short-Circuit Limit
ISC
Source
3
10
mA
Sink
12
8
mA
Open-Loop Output Impedance
ZOUT
f = 1 MHz
200
POWER SUPPLY
Power Supply Rejection Ratio
PSRR
VS = ±4.5 V to ±18 V, 40°C ≤ TA ≤ +85°C
25
316
V/V
Supply Current/Amplifier
ISY
VO = 0 V, 40°C ≤ TA ≤ 85°C
210
250
A
Supply Voltage Range
VS
±4.5
±18
V
DYNAMIC PERFORMANCE
Slew Rate
SR
RL = 10 k
7
9
V/s
Full-Power Bandwidth
BWP
1% distortion
125
kHz
Settling Time
tS
To 0.01%
1.6
s
Gain Bandwidth Product
GBP
4
MHz
Phase Margin
M
55
Degrees
NOISE PERFORMANCE
Voltage Noise
en p-p
0.1 Hz to 10 Hz
1.3
V p-p
Voltage Noise Density
en
f = 1 kHz
36
nV/√Hz
Current Noise Density
in
0.01
pA/√Hz
1
The input bias and offset currents are characterized at TA = TJ = 85°C. Bias and offset currents are guaranteed but not tested at 40°C.
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