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参数资料
| 型号： | OP294 |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 红外LED |
| 英文描述： | GaAlAs Plastic Infrared Emitting Diode |
| 中文描述： | 4.955 mm, 1 ELEMENT, INFRARED LED, 890 nm |
| 文件页数： | 1/2页 |
| 文件大小： | 226K |
| 代理商： | OP294 |
Fea ures
Characterized at 5mA for battery
operated systems or other low drive
current systems
Wide irradiance pattern (OP294) or
narrow irradiance pattern (OP299)
Significantly higher power output than
GaAs at equivalent drive currents
Wavelength matched to silicon’s peak
response
T-1 3/4 package
De scrip ion
The OP294 and OP299 are gallium
arsenide infrared emitting diodes
designed for low current or power limited
applications (such as battery supplies).
These LEDs are similar in design to the
OP290 and OP295 but use a smaller
chip which increases output
efficiency at low current levels by
increasing current density. Light output
can be maximized with continuous (d.c.)
forward current up to 100mA or with
pulsed forward current operation up to
750 mA. The chip is mounted in an IR
transmissive plastic package and has
been designed and tested for use with
OP593/598 phototransistors or similar
photodetector.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Re verse Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Con inu ous For ward Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak For ward Cur ent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mA
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
A max. of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.80 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and 1.429" (36.3 mm) from the measurement surface. E
e(APT)
is not necessarily
uniform within the measured area.
(4) E
is a measurement of the average apertured radiant energy incident upon a sensing
area 0.250" (6.35 mm) in diameter, perpendicular to and centered on the mechanical axis of
the lens, and .500" (12.7 mm) from the measurement surface. E
e(APT)
is not necessarily
uniform within the measured area.
(5) Cathode lead is 0.070" nominal shorter than anode lead.
Prod uct Bul e in OP294
June 1996
GaA As Plas ic In ra ed Emit ing Di ode
Types OP294, OP299
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
2-56
相关PDF资料 |
PDF描述 |
|---|---|
| OP299 | GaAlAs Plastic Infrared Emitting Diode |
| OP297 | GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极管,窄入射模式，峰值前向电流1.0A) |
| OP295 | GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极管,窄入射模式，峰值前向电流5.0A) |
| OP296 | GaAlAs Plastic Infrared Emitting Diode(铝砷化镓塑料封装红外发光二极管,窄入射模式，峰值前向电流2.0A) |
| OP298AA | Plastic Infrared Emitting Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP295 | 制造商:AD 制造商全称:Analog Devices 功能描述:DUAL/QUAD RAIL-TO-RAIL OPERATIONAL AMPLIFIERS |
| OP295_06 | 制造商:AD 制造商全称:Analog Devices 功能描述:Dual/Quad Rail-to-Rail Operational Amplifiers |
| OP2950013P | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| OP295A | 功能描述:红外发射源 Infrared 890nm RoHS:否 制造商:Fairchild Semiconductor 波长:880 nm 射束角:+/- 25 辐射强度: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:Side Looker 封装:Bulk |
| OP295AZ/883 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Voltage-Feedback Operational Amplifier |
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