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参数资料
| 型号： | OP522 |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 光敏三极管 |
| 英文描述： | Silicon Phototransistor in Miniature SMT Package |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封装： | ROHS COMPLIANT, MINIATURE, SMT, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 310K |
| 代理商： | OP522 |
SMT Silicon Phototransistor
OP522
OPTEK Technology Inc.—
1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range
-40° C to +85° C
Operating Temperature Range
-25° C to +85° C
260° C
(1)
Lead Soldering Temperature
Collector-Emitter Voltage
30 V
Collector Current
20 mA
75 mW
(2)
Power Dissipation
Emitter-Collector Voltage
5 V
Notes:
1.
2.
Solder time less than 5 seconds at temperature extreme.
De-rate linearly at 2.17 mW/° C above 25° C.
3.
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
To Calculate typical collector dark current in μA, use the formula I
CEO
= 10
(0.04 T
4.
A
-3/4)
where T
A
is the ambient temperature in ° C.
Issue 1.1 07.05
Page 2 of 4
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
SYMBOL
PARAMETER
TYP
MAX
UNITS
CONDITIONS
I
C(ON)
On-State Collector Current
mA
V
CE
= 5.0V, E
e
= 5.0mW/cm
2 (3)
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.4
V
I
C
= 100μA, E
e
= 2.0mW/cm
2 (3)
I
CEO
Collector-Emitter Dark Current
100
nA
V
CE
= 5.0V, E
e
= 0
(4)
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
I
C
= 100μA
V
(BR)ECO
Emitter-Collector Breakdown Voltage
V
I
E
= 100μA
MIN
0.5
30
5
t
r
, t
f
Rise and Fall Times
15
μs
I
C
= 1mA, R
L
= 1K
R
Relative On-State Collector
Current vs. Irradiance
0
1.0
2.0
3.0
4.0
Ee—Irradiance (mW/cm
2
)
R
80%
100%
120%
140%
160%
Relative On-State Collector Current
vs. Temperature
-25
0
25
50
75
100
Temperature—(
°
C)
60%
40%
5.0
6.0
7.0
90%
100%
110%
120%
130%
80%
70%
140%
8.0
20%
Normalized at E
e
= 5mW/cm
2
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25
°
C
Normalized at T
A
= 25
°
C .
Conditions: V
CE
= 5V,
λ
= 935nm, T
A
= 25
°
C
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相关代理商/技术参数 |
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|---|---|
| OP522 | 制造商:TT Electronics / OPTEK Technology 功能描述:Transistor |
| OP524,005 | 功能描述:MOSFET OP524/UNCASED/FOIL// RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| OP525 | 功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP525DA | 功能描述:光电晶体管 Photo Darlington RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP525F | 功能描述:光电晶体管 Phototransistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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