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参数资料
| 型号： | OP750B |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRNS NPN W/RES SIDE LOOK |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 30mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 935nm |
| 功率 - 最大： | 200mW |
| 安装类型： | 通孔 |
| 方向： | 侧视图 |
| 封装/外壳： | 径向 |
Prod uct Bul le tin OP750A
June 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP750A, OP750B, OP750C, OP750D
Features
? Wide receiving angle
? Variety of sensitivity ranges
? Side-looking package for space
limited applications
? Base-emitter resistor provides
ambient light protection
Description
The OP750 series devices consist of an
NPN silicon phototransistor molded in a
clear epoxy package. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy
PC board mounting of slotted optical
switches or optical interrupt detectors.
Ab so lute Maxi mum Rat ings (T A = 25 o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 o C to +100 o C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 o C (1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW (2)
NOTES:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/ o C above 25 o C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase I C(ON) to 50 μ A.
Typi cal Per form ance Curves
This series is mechanically and
spectrally matched to the OP140 and
Typi cal Spec tral Re sponse
Schematic
OP240 series of infrared emitting
diodes.
The phototransistor has an internal
base-emitter resistor which provides
protection from low level ambient
lighting conditions. This feature is also
useful when the media being detected is
semi-transparent to infrared light in
interruptive applications.
Wave length - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972)323- 2200
Fax (972)323-2396
3-42
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相关代理商/技术参数 |
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|---|---|
| OP750C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP750D | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP755A | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP755B | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP755C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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