参数资料
型号: OP750D
厂商: TT Electronics/Optek Technology
文件页数: 2/2页
文件大小: 0K
描述: PHOTOTRNS NPN W/RES SIDE LOOK
标准包装: 1
系列: *
电压 - 集电极发射极击穿(最大): 30V
电流 - 集电极 (Ic)(最大): 30mA
电流 - 暗 (Id)(最大): 100nA
波长: 935nm
功率 - 最大: 200mW
安装类型: 通孔
方向: 侧视图
封装/外壳: 径向
Elec tri cal Char ac ter is tics (T A = 25 C un less oth er wise noted)
Types OP750A, OP750B, OP750C, OP750D
o
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CON DI TIONS
On-State Collector Current
V CE = 5 V, E e = 1 mW/cm 2(3)
I C(ON)
E K P
Knee Point Irradiance
OP750A
OP750B
OP750C
OP750D
2.25
1.50
0.85
0.85
.03
7.00
4.20
2.80
7.00
mA
mW/cm 2 V CE = 5 V (4)
I CEO
I ECO
V (BR)CEO
V CE(SAT)
Collector-Emitter Dark Current
Emitter-Reverse Current
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
30
100
100
0.4
nA
μ A
V
V
V CE = 10 V, E e = 0
V EC = 0.4 V
I C = 100 μ A
I C = 100 μ A, E e = 1 mW/cm 2(3)
Typi cal Per form ance Curves
Normalized Collector Current
vs. Angular Displacement
Normalized Light and Dark
Current vs. Ambient Temperature
100
10
1
On-State Collector Current
vs. Irradiance
OP550
Light Current
.1
OP750
.01
Dark Current
.001
.0001
V CE = 5 V
LED: λ = 935 nm
.1
1
1.0
θ - Angluar Displacement - Deg.
Normalized Output vs.
Frequency
V R = 1 V
V CE = 5 V
50% Duty Cycle
LED: λ = 935 nm
T A - Ambient Temperature - ° C
Typical Rise and Fall Time vs.
Load Resistance
120
V CC = 5 V
V RL = 1 V
105
f = 100 Hz
PW = 1mS
90
.00001
.001
.01
E e - Irradiance - mW/cm 2
Switching Time
Test Circuit
10
75
0. 5
R L = 1K ?
60
45
30
LED = GaAIAs, λ = 890 nm
R L = 10K ?
15
V RL is voltage across R L
0.0
1
10           100
Frequency - KHz
1000
0
0
2 4 6 8
R L - Load Resistance - K ?
10
Test Conditions:
Light source is pulsed LED with t r
and t f ≤ 500 ns.
I F is adjusted for V OUT = 1 Volt.
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 (972)323-2396
3-43
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