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| 型号： | OP755A |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRNS NPN W/RES SIDE LOOK |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 30mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 935nm |
| 功率 - 最大： | 200mW |
| 安装类型： | 通孔 |
| 方向： | 侧视图 |
| 封装/外壳： | 径向 |
Prod uct Bul le tin OP755
June 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP755A, OP755B, OP755C, OP755D
Features
? Wide receiving angle
? Variety of sensitivity ranges
? Side-looking package for space limited
applications
? Base-emitter resistor provides ambient
light protection
Description
The OP755 device consists of a NPN
silicon phototransistor molded in blue
tinted epoxy packages. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy PC
board mounting of slotted optical
switches or optical interrupt detectors.
The series is mechanically and spectrally
matched to the OP140 and OP240 series
Ab so lute Maxi mum Rat ings (T A = 25 o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Cur rent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 ° C to +100 ° C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 ° C (1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW (2)
Notes:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. When flow sol der ing.
Max. 20 grams force may be ap plied to leads when sol der ing.
(2) Derate linearly 2.0 mW/ ° C above 25 ° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase I C(ON) to 50 μ A.
Typi cal Per form ance Curves
of infrared emitting diodes.
Typical Spectral Response
Schematic
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Wavelength - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972) 323- 2200
Fax (972) 323- 2396
3-44
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP755B | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP755C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP755D | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP760A | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP760B | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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