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| 型号： | OP775A |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRNS NPN W/CAP SIDE LOOK |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 5.5mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 935nm |
| 功率 - 最大： | 100mW |
| 安装类型： | 通孔 |
| 方向： | 侧视图 |
| 封装/外壳： | 径向 |
Prod uct Bul le tin OP775A
Feb ru ary 2000
NPN Phototransistor with Collector-Emitter Capacitor
Types OP775A, OP775B, OP775C, OP775D
Features
Ab so lute Maxi mum Rat ings (T A = 25 o C un less oth er wise noted)
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Supresses high frequency noise
Variety of sensitivity ranges
Wide receiving angle
Side looking package for space limited
applications
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 ° C to +100 ° C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 ° C (1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW (2)
NOTES:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
Description
The OP775 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a blue tinted epoxy package.
The internal collector-emitter capacitor
allows the device to be used in
(2) Derate linearly 1.33 mW/ ° C above 25 ° C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in μ A, use the formula ICED = 10 (0.040T A-3.4) where
T A is ambient temperature in ° C.
Typi cal Per form ance Curves
applications where external high
frequency emissions could compromise
signal integrity.
The device’s wide receiving angle
provides relatively even reception over a
large area.
The OP775 is 100% production tested
using an infrared light source for close
correlation with Optek’s GaAs and
GaAIAs emitters.
The side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Typical Spectral Response
Wavelength - nm
Schematic
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972) 323- 2200
Fax (972) 323- 2396
3-48
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相关代理商/技术参数 |
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|---|---|
| OP775B | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP775C | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP775D | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP777 | 制造商:AD 制造商全称:Analog Devices 功能描述:Precision Micropower Single Supply Operational Amplifier |
| OP777AR | 制造商:Analog Devices 功能描述:OP AMP PRECISION SMD SOIC8 777 |
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