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参数资料
| 型号： | OP800D |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRANS SILICON NPN HERM TO18 |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 50mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 890nm |
| 功率 - 最大： | 250mW |
| 安装类型： | 通孔 |
| 方向： | 顶视图 |
| 封装/外壳： | TO-206AA，TO-18-3 金属罐 |
NPN Silicon Phototransistor
OP800A, OP800B, OP800C, OP800D
Absolute Maximum Ratings (T A =25° C unless otherwise noted)
-65 C to +150 o C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-Collector Voltage
Continuous Collector Current
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
30 V
30 V
5V
5V
50 mA
o
-65 o C to +125 o C
260° C (2)
250 mW (3)
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 2.5 mW/° C above 25° C.
3. Junction temperature maintained at 25° C.
4. Light source is a GaAIAs LED, 890 nm peak emission wavelength, providing a 0.5 mW/cm 2 radiant intensity on the unit
under test. The intensity level is not necessarily uniform over the lens area of the unit under test.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A 9/2010
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
相关PDF资料 |
PDF描述 |
|---|---|
| OP800WSL | PHOTOTRANS SILICON NPN HERM TO18 |
| OP803SL | PHOTOTRANS SILICON NPN HERM TO18 |
| OP805TXV | PHOTOTRANSISTR SILICON NPN TO-18 |
| OP830SL | PHOTODARLINGTON SILICON NPN TO18 |
| OP830WSL | PHOTODARLINGTON NPN 890NM TO-18 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OP800SL | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP800WSL | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP801 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 875NM PEAK WAVELENGTH | CAN-4.7 |
| OP801SL | 功能描述:光电晶体管 Photo Transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP801W | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHOTOTRANSISTOR | NPN | 875NM PEAK WAVELENGTH | TO-18 |
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