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参数资料
| 型号： | OP803TXV |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | PHOTOTRANS SILICON NPN TO-18 |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 50mA |
| 电流 - 暗 (Id)（最大）： | 100nA |
| 波长： | 890nm |
| 视角： | 24° |
| 功率 - 最大： | 250mW |
| 安装类型： | 通孔 |
| 方向： | 顶视图 |
| 封装/外壳： | TO-206AA，TO-18-3 金属罐 |
Product Bulletin OP803TX
September 1996
Hi-Reliability NPN Silicon Phototransistor
Types OP803TX/TXV, OP804TX/TXV, OP805TX/TXV
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to +125 C
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240 C
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Features
? High reliability screening patterned
after MIL-PRF-19500
? Each lot subjected to Group A & B Lot
Acceptance
? Lensed for high sensitivity
? Mechanically and spectrally matched
to the OP235TX/TXV and
OP236TX/TXV series IREDs
Description
Each device in the OP803, OP804 and
OP805TX/TXV series consists of a high
reliability NPN phototransistor mounted in
a lensed, hermetically sealed, TO-18
package. All devices are 100% screened
per Table II of MIL-PRF-19500. Typical
screening and lot acceptance tests are
provided on page 13-4.
The OP803, OP804 and OP805 TX/TXV
series lensing creates an acceptance half
angle of 12 o< D> measured from the optical
axis to the half power point. The series
can be matched with either a solid state
infrared source, such as the OP235 and
OP236 TX/TXV series IREDs, or can be
used to sense infrared content in a visible
light source, such as a tungsten bulb or
sunlight for automatic brightness control.
Absolute Maximum Ratings (T A = 25 o C unless otherwise noted)
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 o C to +150 o C
o o
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering
o (1)
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Emitter-Collector Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(2) Derate linearly 2.5 mW/ o C above 25 o C.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972) 323-2200
Fax (972) 323-2396
13-34
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OP804 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:NPN Silicon Phototransistors |
| OP804SL | 功能描述:光电晶体管 PHOTOSENSOR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP804SL | 制造商:TT Electronics / OPTEK Technology 功能描述:PHOTOSENSOR PHOTOTRANSISTOR OuTPuT IRR |
| OP804TX | 功能描述:光电晶体管 TO-18, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OP804TXV | 功能描述:光电晶体管 TO-18, NPN silicon Photo transistor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
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