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参数资料
| 型号： | OPB608B |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | SENSR OPTO TRANS 1.27MM REFL PCB |
| 标准包装： | 1 |
| 检测距离： | 0.050"（1.27mm） |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 电流 - 集电极 (Ic)（最大）： | 25mA |
| 电流 - DC 正向(If)： | 50mA |
| 输出类型： | 光电晶体管 |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 工作温度： | -40°C ~ 85°C |
Reflective Object Sensor
OPB608A, OPB608B, OPB608C, OPB608R, OPB608V
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Infrared-LED (880 nm) (See OP240 for additional information)
V F
I R
Forward Voltage
Reverse Current
-
-
-
-
1.7
100
V
μA
I F = 20 mA
V R = 2 V
Infrared-LED (650 nm)
V F
V R
Forward Voltage
Reverse Voltage
-
5
1.9
-
2.5
-
V
V
I F = 20 mA
I R = 10 μA
Infrared VCSEL (850 nm) (See OPV330 for additional information)
V F
I R
I TH
Θ
Forward Voltage
Reverse Current
Threshold Current
Beam Divergence
-
-
2
-
-
-
-
12
2.2
30
5.5
-
V
nA
mA
Deg.
I F = 12 mA
V R = 5 V
I F = 12 mA
-
Phototransistor (See OP705 for additional information)
V (BR)CEO
V (BR)ECO
V CE(SAT)
I CEO
Collector Emitter Breakdown Voltage
Emitter Collector Breakdown Voltage
Saturation Voltage
Collector Emitter Dark Current
30
0.4
-
-
-
-
-
-
-
-
.40
100
V
V
V
nA
I C = 100 μA, E E = 0 μW/cm 2
I E = 100 μA, E E = 0 μW/cm 2
I C = 100 μA, I F = 20 mA, d = 0.053”
V CE = 5 V, E E = ≤ .10 μW/cm 2 , I F = 0
Combined
On-State Collector Current
I C(ON)
I C(OFF)
OPB608A
OPB608B
OPB608C
OPB608R
OPB608V
Off-State Collector Current
LED
VCSEL
2
1
0.5
1
5
-
-
-
-
-
-
-
-
-
-
4
-
6
-
100
100
mA
nA
V CE = 5 V, I F = 20 mA, d = 0.053 inch
(1.35 mm) (1)(2)
V CE = 5 V, I F = 10 mA, d = 0.053 inch
(1.35 mm) (1)(2)
No reflective surface, V CE = 5 V
I F = 20 mA
I F = 10 mA
Notes:
(1) Distance from the front of the lens to reflective surface.
(2) Measured using Eastman Kodak gray card. The white side of the card is used as a 90% diffuse reflective surface. Reference
Eastman Kodak catalog #E152 7795
(3) All parameters are tested using pulse techniques.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B
10/2010
Page 3 of 5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OPB608C | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| OPB608R | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| OPB608R | 制造商:TT Electronics / OPTEK Technology 功能描述:OPTOSwITCH LEADED PROCESS COMPATIBLE:YES |
| OPB608V | 功能描述:光学开关（反射型，光电晶体管输出） REFLECTIVE SENSOR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| OPB608V | 制造商:TT Electronics / OPTEK Technology 功能描述:OPTOSwITCH LEADED PROCESS COMPATIBLE:YES |
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