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参数资料
| 型号： | OPB750N |
| 厂商： | OPTEK TECHNOLOGY INC |
| 元件分类： | 光电传感器 |
| 英文描述： | Reflective Object Sensor |
| 中文描述： | POSITION, LINEAR SENSOR-DIFFUSE, 2.03-5.59mm, 1mA, RECTANGULAR, THROUGH HOLE MOUNT |
| 封装： | ROHS COMPLIANT PACKAGE-4 |
| 文件页数： | 1/2页 |
| 文件大小： | 423K |
| 代理商： | OPB750N |
Fea ures
High contrast ratio 1000 to 1 minimum
Printed circuit board mount
Low cost plastic housing
De scrip ion
The OPB750N reflective assembly
features a phototransistor output
designed to decrease low-level light gain
while not affecting the high-level light
gain. Available with two mounting tabs as
OPB750T.
Available with 12", 26 AWG wire leads as
OPB755 series. Photologic
output
sensors available in OPB760/OPB770
series.
Ab so ute Maxi mum Rat ngs
(T
A
= 25
o
C un ess oth er wise noted)
Stor age and Op er at ng Tem pera ure Range . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
Lead Sol der ng Tem pera ure [1/16 inch (1.6 mm) from case for 5 sec. with sol der ng
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
(2)
In put Di ode
For ward DC Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur ent (1
μ
s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse DC Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Out put Pho o ran sis or
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Col ec or DC Cur ent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dis si pa ion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Notes:
(1) Derate Linearly 1.67 mW/
o
C above 25
o
C.
(2) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(3) All parameters tested using pulse technique.
(4) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in
chlorinated hydrocarbons and ketones.
(5) Photocurrent is measured using an Eastman Kodak Neutral White test card having a 90%
diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #1257795.
(6) I
C(OFF)
is the photocurrent measured with current to the input diode and a 5% reflecting
surface.
Prod uct Bul e in OPB750N
June 1996
Re lec ive Ob ect Sen sor
Type OPB750N
Op ek Tech nol ogy, Inc. 1215 W. Crosby Road Car oll on, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
11-42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OPB750N | 制造商:TT Electronics / OPTEK Technology 功能描述:Optical Sensor (Switch) Reflective |
| OPB750N_06 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:Reflective Object Sensor |
| OPB750T | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| OPB750T_06 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:Reflective Object Sensor |
| OPB755N | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
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