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参数资料
| 型号： | OPB750T |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 3/4页 |
| 文件大小： | 0K |
| 描述： | SENSR OPTO TRANS 5.59MM REFL PCB |
| 标准包装： | 1 |
| 检测距离： | 0.220"（5.59mm） |
| 检测方法： | 反射 |
| 电压 - 集电极发射极击穿（最大）： | 24V |
| 电流 - 集电极 (Ic)（最大）： | 30mA |
| 电流 - DC 正向(If)： | 50mA |
| 输出类型： | 光电晶体管 |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 工作温度： | -40°C ~ 85°C |
Reflective Object Sensor
OPB750N, OPB750T
OPB755NZ, OPB755TZ, OPB755TAZ
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Operating and Storage Temperature Range
Power Dissipation
OPB750N, OPB750T
OPB755NZ, OPB755TZ, OPB755TAZ
Lead Soldering Temperature (1)
Input Diode
Forward DC Current
Peak Forward Current (1 μ pulse width, 300 pps)
Reverse DC Voltage
Power Dissipation
Output Phototransistor
Collector-Emitter Voltage
Collector DC Current
(3)
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-40° C to + 85° C
-40° C to + 80° C
260° C
50 mA
1A
2V
100 mW
24 V
30 V
100 mW
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode (See OP240 for additional information)
V F
I R
Forward Voltage
Reverse Current
-
-
-
-
1.8
100
V
μA
I F = 40 mA
V R = 2 V
Output Phototransistor (see OP550 for additional information)
V (BR)CEO
I CEO
Collector-Emitter Breakdown Voltage
Collector Dark Current
24
-
-
-
-
100
V
nA
I C = 100 μA
V CE = 10 V, I F = 0, H = 0
Coupled
V CE(SAT)
I C(OFF)
I C(ON)
Saturation Voltage
Off-State Collector Current (5)
On-State Collector Current (4)
-
-
500
375
-
-
-
-
.40
250
-
-
V
nA
μA
I C = 150 μA, I F = 30 mA, d = 0.22”
I F = 30 mA, V CE = 5 V
d = 0.08”, 0.15”, 0.22”
I F = 30 mA, V CE = 5 V, d = 0.08”
I F = 30 mA, V CE = 5 V, d = 0.15”
250
-
-
I F = 30 mA, V CE = 5 V, d = 0.22”
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.67 mW/° C above 25° C.
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and
ketones.
(4) Photocurrent is measured using an Eastman Kodak neutral white test card having 90% diffuse reflectance as a reflecting
surface. Reference: Eastman Kodak, Catalog #E 152 7795.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com
Issue A.3 05/08
Page 3 of 4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OPB750T_06 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:Reflective Object Sensor |
| OPB755N | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| OPB755NZ | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| OPB755T | 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel |
| OPB755T_06 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:Reflective Object Sensor |
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