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| 型号： | OPB806 |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/4页 |
| 文件大小： | 211K |
| 描述： | SENS OPTO SLOT 3.18MM TRANS THRU |
| 标准包装： | 1 |
| 检测距离： | 0.125" (3.18mm) |
| 检测方法： | 可传导的 |
| 输出配置： | 光电晶体管 |
| 电流 - DC 正向(If)： | 50mA |
| 电压 - 集电极发射极击穿（最大）： | 30V |
| 安装类型： | 通孔 |
| 封装/外壳： | PCB 安装 |
| 包装： | 散装 |
| 类型： | 无放大 |
| 工作温度： | -40°C ~ 85°C |
OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 03/2012
Page 2 of 4
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB806
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.67 mW/癈 above 25 ?C..
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and
ketones.
(4) All parameters were tested using pulse technique.
Electrical Characteristics (T
A
= 25癈 unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (See OP165 for additional information)
V
F
Forward Voltage
- - 1.7 V I
F
= 20 mA
I
R
Reverse Current
- - 100 礎 V
R
= 2 V
Output Phototransistor (See OP505 for additional information)
V
(BR)CEO
Collector-Emitter Breakdown Voltage 30 - - V I
C
= 100 礎
V
(BR)ECO
Emitter-Collector Breakdown Voltage 5 - - V I
E
= 100 礎
I
CEO
Collector-Emitter Dark Current
- - 100 nA V
CE
= 10 V, I
F
= 0, E
E
= 0
Combined
V
CE(SAT)
Collector-Emitter Saturation Voltage - - 0.5 V I
C
= 200 礎, I
F
= 20 mA
I
C(ON)
On-State Collector Current
0.4 - - mA V
CE
= 0.5 V, I
F
= 20 mA
Absolute Maximum Ratings (T
A
=25癈 unless otherwise noted)
Storage & Operating Temperature Range
-40?C to +85?C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
(1)
260?C
Input Diode
Continuous Forward Current
50 mA
Peak Forward Current (1 約 pulse width, 300 pps)
3 A
Reverse Voltage
2 V
Power Dissipation
(2)
100 mW
Output Phototransistor
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Power Dissipation
(2)
100 mW
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相关代理商/技术参数 |
参数描述 |
|---|---|
| OPB806_05 | 制造商:OPTEK 制造商全称:OPTEK 功能描述:Slotted Optical Switch |
| OPB810L | 制造商:OPTEK 制造商全称:OPTEK 功能描述:WIDE GAP SLOTTED OPTICAL SWITCHES |
| OPB810L51 | 功能描述:光学开关（透射型，光电晶体管输出） .375" WIDE GAP 890NM RoHS:否 制造商:Omron Electronics 输出设备:Phototransistor 槽宽:3.4 mm 光圈宽度:0.5 mm 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电流: 安装风格:Through Hole 最大工作温度:+ 85 C 最小工作温度:- 25 C 封装: |
| OPB810L55 | 功能描述:光学开关（透射型，光电晶体管输出） Wd Gap Opt Switch RoHS:否 制造商:Omron Electronics 输出设备:Phototransistor 槽宽:3.4 mm 光圈宽度:0.5 mm 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电流: 安装风格:Through Hole 最大工作温度:+ 85 C 最小工作温度:- 25 C 封装: |
| OPB810W | 制造商:OPTEK 制造商全称:OPTEK 功能描述:WIDE GAP SLOTTED OPTICAL SWITCHES |
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