参数资料
型号: OPB822SD
厂商: TT Electronics/Optek Technology
文件页数: 4/4页
文件大小: 229K
描述: SENS OPTO SLOT 2.29MM 2 NPN THRU
标准包装: 1
检测距离: 0.090"(2.29mm)
检测方法: 可传导的
输出配置: 2 NPN
电流 - DC 正向(If): 50mA
电流 - 集电极 (Ic)(最大): 30mA
电压 - 集电极发射极击穿(最大): 30V
安装类型: 通孔
封装/外壳: PCB 安装
包装: 散装
类型: 无放大
工作温度: -40°C ~ 85°C
其它名称: Q1155117F
OPTEK Technology Inc.  1645 Wallace Drive, Carrollton, Texas 75006 
Phone: (972) 323-2200 or (800) 341-4747    FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue B 9/2010
Page 4 of 4
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Dual Channel Encoder
OPB822S, OPB822SD
OPB826S, OPB826SD
Electrical Characteristics (OPB822, OPB826) (T
A
 = 25癈 unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (see OP14O for OPB822 or OP266 for OPB826 for additional information)
V
F
    Forward Voltage
-    -    1.7    V   I
F
= 20 mA
I
R
    Reverse Current
-    -    100    礎   V
R
= 2 V
Output Phototransistor (see OP550 for OPB822 or OP506 for OPB826 for additional information)
V
(BR)(CEO)
  Collector-Emitter Breakdown Voltage    30   -    -     V   I
C
= 1 mA
V
(BR)(ECO)
  Emitter-Collector Breakdown Voltage    5    -    -     V   I
E
= 100 礎
I
CEO
   Collector-Emitter Leakage Current
-    -    100    nA   V
CE
= 10 V, I
F
= 0, E
E
= 0
Coupled
I
C(ON)
 
On-State Collector Current
   OPB822S
   OPB822SD
   OPB826S
   OPB826SD
 
250
100
250
100
 
-
-
-
-
 
-
-
-
-
 
 
V
CE
= 5 V, I
F
= 20 mA
V
CE
= 5 V, I
F
= 20 mA
V
CE
= 10 V, I
F
= 20 mA
V
CE
= 10 V, I
F
= 20 mA
V
CE(SAT)
 
Collector-Emitter Saturation Voltage
   OPB822S
   OPB822SD
   OPB826S
   OPB826SD
 
-
-
-
-
 
-
-
-
-
 
0.4
0.4
0.4
0.4
 
V
V
V
V
 
I
C
= 125 礎, I
F
= 20 mA
I
C
= 50 礎, I
F
= 20 mA
I
C
= 125 礎, I
F
= 20 mA
I
C
= 50 礎, I
F
= 20 mA
I
CX1
 
Crosstalk
   OPB822D, OPB822SD
   OPB826S
   OPB826SD
 
-
-
-
 
-
-
-
 
250
20
10
礎   I
F1
= 0 mA, I
F2
= 20 mA, V
CE
= 10 V
Notes:
(1) All parameters tested using pulse techniques.
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