- 您现在的位置：买卖IC网 > Datasheet目录497 > OPL583 (TT Electronics/Optek Technology)DIODE DUAL PHOTOLOGIC 16V PLSTIC Datasheet资料下载
参数资料
| 型号： | OPL583 |
| 厂商： | TT Electronics/Optek Technology |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | DIODE DUAL PHOTOLOGIC 16V PLSTIC |
| 标准包装： | 1 |
| 系列： | * |
| 波长： | * |
| 类型： | * |
| 输出类型： | * |
| 封装/外壳： | 侧视图 |
Dual Channel Photologic Encoder Detector
OPL583
Absolute Maximum Ratings (T A =25°C unless otherwise noted)
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
Output Photologic?
Supply Voltage V CC
Power Dissipation
Duration of Output Short to V CC
Voltage at Output
Low Level Output Current (sinking)
Electrical Characteristics (T A = 25 ° C unless otherwise noted)
-40° C to +85° C
-40° C to +100° C
260°C (1)
18 V (2)
200 mW (3)
1 second
18 V
40 mA
SYMBOL
V CC
PARAMETER
Operating Supply Voltage (4)
MIN
4.5
TYP
-
MAX
16
UNITS
V
TEST CONDITIONS
-
E ET(+)
E ET(+)/ E ET(-)
MATCH
I CCL
I CCH
I CCM
I oh
V OL
T PHL
T PLH
t r
t f
Positive-Going Threshold Irradiance
Hysteresis Ratio
Channel Match
E ET(+ A) / E ET(+ B)
Supply Current
Both Outputs Low
(both photodiodes irradiated)
Supply Current
Both Outputs High
(both photodiodes shaded)
Supply Current
Mixed Output States
(one high, one low)
High Level Output Current
Low Level Output Voltage
Propagation Delay
Output High to Low
Output Low to HIgh
Output Rise Time
Output Fall Time
(5)
0.05
1.1
0.67
-
-
-
-
-
-
-
0.10
1.5
1
8.5
3.5
6
1
0.21
2
10
20
15
0.25
2
1.5
12
6
-
30
0.4
-
-
mW/cm
-
-
mA
mA
mA
μA
V
μs
μs
ns
ns
2
-
-
-
E E = 0.5 mW/cm 2 (no load on output)
E E = 0 mW/cm 2 (no load on output)
E E = 0 mW/cm 2 and 0.5 mW/cm 2
E E = 0 mW/cm 2 , V OH = 16 V
E E = 0.5 mW/cm 2 , I OL = 12.8 mA
V CC = 5 V, R L = 360 ?
E E = 0 or 0.5 mW/cm 2 , f = 10 kHz,
D.C. = 50%
-
Notes:
(1)
(2)
(3)
(4)
(5)
RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
Derate linearly 0.37 V/°C above 58° C.
Derate linearly 2.67 mW/° C above 25° C.
A 0.01 μF capacitor should be used across the V CC and GND leads to stabilize the power supply line.
Irradiance measurements are made with λ = 940 nm.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue A 02/07
Page 2 of 3
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
相关PDF资料 |
PDF描述 |
|---|---|
| OPL800TXV | SENSOR PHOTOLOGIC HERMETIC TO-18 |
| OPL813-OC | SENSOR PHOTOLOGIC HERMETIC TO-18 |
| OPL821 | SENSOR PHOTOLOGIC HERMETIC TO-18 |
| OPR5200 | LED MINIATURE GAAIAS SMD |
| OPR5500 | PHOTOTRANSISTOR NPN SILICON SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| OPL6000 | 功能描述:RCVR 128KHZ ASIC 1.9MM SMD 制造商:tt electronics/optek technology 系列:- 零件状态:无货 波长:940nm 类型:光电探测器 - 逻辑输出 输出类型:推挽式 封装/外壳:* 工作温度:-40°C ~ 85°C（TA） 标准包装:1 |
| OPL611 | 功能描述:光电晶体管 SMD Photologic Sensor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OPL612 | 功能描述:光电晶体管 SMD Photologic Sensor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OPL614 | 功能描述:光电晶体管 SMD Photologic Sensor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
| OPL615 | 功能描述:光电晶体管 SMD Photologic Sensor RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗电流:200 nA 封装 / 箱体:T-1 |
发布紧急采购，3分钟左右您将得到回复。