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参数资料
| 型号： | P3057LD |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N沟道增强模式的逻辑电平场效应晶体管 |
| 文件页数： | 1/4页 |
| 文件大小： | 216K |
| 代理商： | P3057LD |
1
APR-14-2003
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P3057LD
TO-252 (DPAK)
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
V
GS
±20
V
T
C
= 25 °C
12
Continuous Drain Current
T
C
= 100 °C
I
D
8
Pulsed Drain Current
1
I
DM
45
A
Avalanche Energy
L = 0.1mH
E
AS
60
Repetitive Avalanche Energy
2
L = 0.05mH
E
AR
3
mJ
T
C
= 25 °C
48
Power Dissipation
T
C
= 100 °C
P
D
20
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
Lead Temperature (
1
/
16
” from case for 10 sec.)
T
L
275
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
θ
JC
3
Junction-to-Ambient
R
θ
JA
75
Case-to-Heatsink
R
θ
CS
1
°C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
≤
1
%
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
μ
A
25
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
0.8
1.2
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
±250 nA
V
DS
= 20V, V
GS
= 0V
25
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
250
μ
A
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
12
A
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
25
50m
Ω
12A
G
D
S
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