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参数资料
| 型号： | P3257-30 |
| 英文描述： | Optoelectronic |
| 中文描述： | 光电 |
| 文件页数： | 2/4页 |
| 文件大小： | 192K |
| 代理商： | P3257-30 |
MCT photoconductive detector
P3257/P3981/P2750 series
WAVELENGTH (mm)
2
3
4
5
10
10
10
9
10
11
10
8
D
*
λ
,
·
(Typ.)
1
2
T= -30
C
T=0
C
WAVELENGTH (μm)
2
3
4
5
6
10
10
10
11
10
9
10
7
10
8
D
*
λ
,
·
(Typ.)
1
2
P2750/-06 (T= -60
C)
P2750-08 (T= -30
C)
ELEMENT TEMPERATURE (
C)
-80
0
40
10
10
10
9
10
11
10
8
D
*
λ
,
·
(Typ.)
-60
-40
-20
20
1
2
P2750
P3981
R
CURRENT (mA)
0
3
5
1
2
4
0
(Typ.)
2
4
6
8
10
1
3
5
7
9
D
*
S
N
CURRENT (A)
[Typ. Ta=25
C, thermal resistance of heatsink=3
C/W (one and two-stage TE-cooled),
1.2
C/W (three-stage TE-cooled)]
E
C
0.4
0
-80
-60
-40
40
20
0
-20
0.8
1.2
1.6
ONE-STAGE
TE-COOLED
TYPE
TWO-STAGE
TE-COOLED
TYPE (TO-8)
TWO-STAGE
TE-COOLED
TYPE
(TO-66)
THREE-STAGE
TE-COOLED
TYPE
I
Spectral response
I
D
*
vs. element temperature
KIRDB0174EA
I
S/N vs. bias current (P2750)
KIRDB0070EC
KIRDB0164EB
KIRDB0066EB
KIRDB0068EB
I
Cooling characteristics of TE-cooler
KIRDB0175EA
P3257-30/-31
P3981/-01
P2750/-06/-08
The detector must be operated in a range
where the D
*
becomes Max.
WAVELENGTH (μm)
D
*
λ
,
·
(Typ.)
1
2
2
4
6
8
12
10
3
5
7
9
11
10
7
10
6
10
8
10
5
P3257-30 (T=25
C)
P3257-31 (T=0
C)
2
相关PDF资料 |
PDF描述 |
|---|---|
| P2750 | |
| P2750-04 | 18 PIN, 4KB Enh Flash 256 RAM, 16 I/O, -40C to +125C, 18-PDIP, TUBE |
| P2750-06 | 20 PIN, 4KB Enh Flash 256 RAM, 16 I/O, -40C to +125C, 20-SSOP 208mil, TUBE |
| P2750-08 | 18 Pin, 8 KB Enh Flash, 256 RAM, 16 I/O, -40C to +85C, 28-QFN, TUBE |
| P3257-31 | Optoelectronic |
相关代理商/技术参数 |
参数描述 |
|---|---|
| P3257-31 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| P3257-50 | 制造商:HAMAMATSU 制造商全称:Hamamatsu Corporation 功能描述:MCT photoconductive detector |
| P3258 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| P3258-02 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| P3258-03 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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