参数资料
型号: P3503QVG
厂商: Electronic Theatre Controls, Inc.
英文描述: N- & P-Channel Enhancement Mode Field Effect Transistor
中文描述:
文件页数: 2/8页
文件大小: 549K
代理商: P3503QVG
2
OCT-08-2004
N- & P-Channel Enhancement Mode
Field Effect Transistor
P3503QVG
SOP-8
Lead-Free
NIKO-SEM
V
DS
= 24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V
N-Ch
P-Ch
1
-1
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20V, V
GS
= 0V, T
J
= 55 °C
N-Ch
P-Ch
10
-10
μ
A
V
DS
= 5V, V
GS
= 10V
On-State Drain Current
1
I
D(ON)
V
DS
=-5V, V
GS
= -10V
N-Ch
P-Ch
20
-20
A
V
GS
= 4.5V, I
D
= 6A
V
GS
= -4.5V, I
D
= -5A
N-Ch
P-Ch
25
44
37
60
V
GS
= 10V, I
D
= 7A
Drain-Source
Resistance
1
On-State
R
DS(ON)
V
GS
= -10V, I
D
= -6A
N-Ch
P-Ch
18
28
25
35
m
V
DS
= 5V, I
D
= 7A
Forward Transconductance
1
g
fs
V
DS
= -5V, I
D
= -5A
N-Ch
P-Ch
19
10
S
DYNAMIC
Input Capacitance
C
iss
N-Ch
P-Ch
790
970
988
1213
Output Capacitance
C
oss
N-Ch
P-Ch
175
370
245
520
Reverse Transfer Capacitance
C
rss
N-Channel
V
GS
= 0V, V
DS
= 10V, f = 1MHz
P-Channel
V
GS
= 0V, V
DS
= -10V, f = 1MHz N-Ch
P-Ch
65
180
98
270
pF
Total Gate Charge
2
Q
g
N-Ch
P-Ch
16
28
Gate-Source Charge
2
Q
gs
N-Ch
P-Ch
2.5
6
Gate-Drain Charge
2
Q
gd
N-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 6A
P-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -5A
N-Ch
P-Ch
2.1
12
nC
Turn-On Delay Time
2
t
d(on)
N-Ch
P-Ch
2.2
20
4.4
Rise Time
2
t
r
N-Ch
P-Ch
7.5
17
15
Turn-Off Delay Time
2
t
d(off)
N-Ch
P-Ch
11.8
160
21.3
Fall Time
2
t
f
N-Channel
V
DD
= 10V
I
D
1A, V
GS
= 10V, R
GEN
= 6
P-Channel
V
DD
= -15V
I
D
-1A, V
GS
= -10V, R
GEN
= 6
N-Ch
P-Ch
3.7
75
7.4
nS
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