参数资料
型号: P4C1256L-20TMBLF
厂商: PYRAMID SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: HIGH SPEED 32K x 8 STATIC CMOS RAM
中文描述: 32K X 8 STANDARD SRAM, 20 ns, PDSO28
封装: 8 X 13.40 MM, ROHS COMPLIANT, PLASTIC, TSOP-28
文件页数: 6/17页
文件大小: 183K
代理商: P4C1256L-20TMBLF
P4C1256
Page 6 of 17
Document #
SRAM119
REV G
-35
AC CHARACTERISTICS—WRITE CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Sym.
t
WC
t
CW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
Parameter
Write Cycle Time
Chip Enable
Time to End of
Write
Address Valid to
End of Write
Address Set-up
Time
Write Pulse
Width
Address Hold
Time
Data Valid to
End of Write
Date Hold Time
Min Max Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
-20
-25
-45
-55
-70
-12
-15
Unit
12
0
0
9
0
8
15
11
0
20
15
0
25
0
18
0
35
0
22
0
45
0
25
0
55
0
30
0
70
0
35
0
9
10
0
9
15
0
11
18
20
0
13
22
25
0
15
30
35
0
20
35
40
0
25
40
45
0
30
ns
ns
ns
ns
ns
ns
ns
ns
t
AW
9
10
15
0
0
Write Enable to
Output in High Z
Output Active
from End of Write
7
8
10
11
15
18
25
30
ns
t
OW
3
3
3
3
5
5
0
0
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (
WE
CONTROLLED)
(10,11)
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