参数资料
型号: P4C1256L-35TMBLF
厂商: PYRAMID SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: HIGH SPEED 32K x 8 STATIC CMOS RAM
中文描述: 32K X 8 STANDARD SRAM, 35 ns, PDSO28
封装: 8 X 13.40 MM, ROHS COMPLIANT, PLASTIC, TSOP-28
文件页数: 8/17页
文件大小: 183K
代理商: P4C1256L-35TMBLF
P4C1256
Page 8 of 17
Document #
SRAM119
REV G
Input Pulse Levels
GND to 3.0V
Input Rise and Fall Times
3ns
Input Timing Reference Level
1.5V
Output Timing Reference Level
1.5V
Output Load
See Figures 1 and 2
AC TEST CONDITIONS
Figure 1. Output Load
Figure 2. Thevenin Equivalent
* including scope and test fixture.
Note:
Because of the ultra-high speed of the P4C1256, care must be taken when
testing this device; an inadequate setup can cause a normal functioning part
to be rejected as faulty. Long high-inductance leads that cause supply
bounce must be avoided by bringing the V
and ground planes directly up
to the contactor fingers. A 0.01 μF high frequency capacitor is also required
between V
CC
and ground. To avoid signal reflections, proper termination
must be used; for example, a 50
test environment should be terminated
into a 50
load with 1.73V (Thevenin Voltage) at the comparator input,
and a 116
resistor must be used in series with D
OUT
to match 166
(Thevenin Resistance).
Write
Active
Active
Read
TRUTH TABLE
Mode
Standby
Standby
D
OUT
Disabled
Standby
Standby
Power
I/O
W E
X
X
OE
X
X
CE
H
X
High Z
High Z
D
OUT
High Z
H
H
L
H
L
X
L
L
L
Active
High Z
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P4C1256L-45CMBLF 制造商:PYRAMID 制造商全称:Pyramid Semiconductor Corporation 功能描述:HIGH SPEED 32K x 8 STATIC CMOS RAM
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