参数资料
型号: P4C1256L70SNILF
厂商: PYRAMID SEMICONDUCTOR CORP
元件分类: DRAM
英文描述: LOW POWER 32K x 8 STATIC CMOS RAM
中文描述: 32K X 8 STANDARD SRAM, 70 ns, PDSO28
封装: 0.330 INCH, ROHS COMPLIANT, SOP-28
文件页数: 3/11页
文件大小: 123K
代理商: P4C1256L70SNILF
P4C1256L
Page 3 of 11
Document #
SRAM121
REV E
Symbol
Parameter
Test Conditions
Max
7
Unit
C
IN
C
OUT
Input Capacitance
Output Capacitance
V
IN
= 0V
V
OUT
= 0V
9
pF
pF
Symbol
Parameter
-55
Min
55
Max
-70
Min
70
Max
Unit
t
RC
ns
t
AA
Address Access Time
55
70
ns
t
AC
Chip Enable Access
Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
55
70
ns
t
OH
5
5
ns
t
LZ
5
5
ns
t
HZ
Chip Disable to
Output in High Z
20
25
ns
t
OE
Output Enable Low
to Data Valid
30
35
ns
t
OLZ
Output Enable Low to
Low Z
5
5
ns
t
OHZ
Output Enable High
to High Z
Chip Enable to Power
Up Time
20
25
ns
t
PU
0
0
ns
t
PD
Chip Disable to
Power Down Time
55
70
ns
Read Cycle Time
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, F = 1.0 MHz)
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
*
Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e.
CE
and
WE
V
IL
(max),
OE
is high. Switching
inputs are 0V and 3V.
**As above but @ f=1 MHz and V
IL
/ V
IH
= 0V/ V
CC
.
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
-55
15
25
-70
15
25
Unit
I
CC
Dynamic Operating Current
Commercial
Industrial
70
85
70
85
mA
mA
-55
-70
Temperature
Range
*
**
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