参数资料
型号: P4C1281-25CI
厂商: PYRAMID SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 64K X 4 STANDARD SRAM, 25 ns, CDIP28
封装: 0.300 INCH, CERAMIC, DIP-28
文件页数: 4/11页
文件大小: 862K
代理商: P4C1281-25CI
P4C1281/P4C1282 - ULTRA HIGH SPEED 64K x 4 CMOS STATIC RAMS
Page 2
Document # SRAM136 REV OR
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)(2)
Sym Parameter
Value
Unit
V
CC
Power Supply Pin with
Respect to GND
-0.5 to +7
V
TERM
Terminal Voltage with
Respect to GND (up to
7.0V)
-0.5 to VCC + 0.5
V
T
A
Operating Temperature
-55 to +125
°C
T
BIAS
Temperature Under Bias
-55 to +125
°C
T
STG
Storage Temperature
-65 to +150
°C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
50
mA
MAxIMUM RATIngS(1)
RECOMMEnDED OPERATIng COnDITIOnS
grade(2)
Ambient Temp
gnD
V
CC
Commercial
0°C to 70°C
0V
5.0V ± 10%
Industrial
-40°C to +85°C
0V
5.0V ± 10%
Military
-55°C to +125°C
0V
5.0V ± 10%
CAPACITAnCES(4)
(V
CC = 5.0V, TA = 25°C, f = 1.0MHz)
Sym
Parameter
Conditions Typ Unit
C
IN
Input Capacitance
V
IN=0V
8
pF
C
OUT
Output Capacitance
V
OUT=0V
10
pF
Sym Parameter
Test Conditions
P4C1281/1282
Unit
Min
Max
V
IH
Input High Voltage
2.2
V
CC + 0.5
V
IL
Input Low Voltage
-0.5(3)
0.8
V
HC
CMOS Input High Voltage
V
CC - 0.2
V
CC + 0.5
V
LC
CMOS Input Low Voltage
-0.5(3)
0.2
V
CD
Input Clamp Diode Voltage
V
CC = Min, IIN = -18 mA
-1.2
V
OL
Output Low Voltage (TTL Load)
I
OL = +8 mA, VCC = Min
0.4
V
OH
Output High Voltage (TTL Load)
I
OH = -4 mA, VCC = Min
2.4
V
I
LI
Input Leakage Current
V
CC = Max,
V
IN = GND to VCC
MIL
-10
+10
A
IND/COM
-5
+5
I
LO
Output Leakage Current
V
CC = Max, CE = VIH,
V
OUT = GND to VCC
MIL
-10
+10
A
IND/COM
-5
+5
I
SB
Standby Power Supply Current
(TTL Input Levels)
CE ≥ V
IH, VCC = Max, f = Max,
Outputs Open
MIL
40
mA
IND/COM
35
I
SB1
Standby Power Supply Current
(CMOS Input Levels)
CE ≥ V
HC, VCC = Max, f = 0,
Outputs Open
V
IN ≤ VLC or VIN ≥ VHC
MIL
20
mA
IND/COM
15
N/A = Not applicable
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