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参数资料
| 型号： | P4KE10A-B |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 139K |
| 代理商： | P4KE10A-B |
65
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Revision: January 09, 2009
Axial Leaded – 400W > P4KE series
P4KE Series
Please refer to http://www.Littelfuse.com/series/P4KE.html for current information.
P4KE
S
eries
P4KE Series
TVS devices are ideal for the protection of I/O interfaces,
V
CC bus and other vulnerable circuits used in telecom,
computer, industrial and consumer electronic applications.
Applications
Features
The P4KE Series is designed specically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Description
Parameter
Symbol
Value
Unit
Peak Pulse Power Dissipation by
10x1000μs test waveform (Fig.1)
(Note 1)
P
PPM
400
W
Steady State Power Dissipation on
ininite heat sink at T
L=75C (Fig. 5)
P
D
1.5
W
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave Unidirectional
only (Note 2)
I
FSM
40
A
Maximum Instantaneous Forward
Voltage at 25A for Unidirectional
only (Note 3)
V
F
3.5/5.0
V
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to 175
°C
Typical Thermal Resistance Junction
to Lead
R
uJL
60
°C/W
Typical Thermal Resistance Junction
to Ambient
R
uJA
100
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A = 25
O
C per Fig. 2.
2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per
minute maximum.
3. V
F<3.5V for devices of VBR _
<
200V and V
F<5.0V for devices of VBR _
>
201V.
Maximum Ratings and Thermal Characteristics
(T
A=25
O
C unless otherwise noted)
Agency Approvals
temperature coefcient
ΔV
BR = 0.1% x VBR@25°C x ΔT
junction in DO-41 Package
capability at 10×1000μs
waveform, repetition rate
(duty cycles):0.01%
typically less than 1.0ps
from 0 Volts to BV min
capability
resistance
R less than 1μA
above 13V
soldering guaranteed:
260°C/40 seconds /
0.375”,(9.5mm) lead
length, 5 lbs., (2.3kg)
tension
Underwriters Laboratory
Flammability classication
94V-O
AGENCY
AGENCY FILE NUMBER
E230531
RoHS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| P4KE10A-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE10A-E3/23 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE10A-E3/4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE10A-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE10A-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 10V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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