参数资料
型号: P4KE180CA-E3/73
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: TVS 400W 180V 5% BIDIR AXIAL
标准包装: 3,000
系列: TransZorb®
电压 - 反向隔离(标准值): 154V
电压 - 击穿: 171V
功率(瓦特): 400W
电极标记: 双向
安装类型: 通孔
封装/外壳: DO-204AL,DO-41,轴向
供应商设备封装: DO-204AL(DO-41)
包装: 带盒(TB)
P4KE6.8A thru P4KE540A
www.vishay.com
Vishay General Semiconductor
T RANS Z ORB? Transient Voltage Suppressors
FEATURES
? Glass passivated chip junction
? Available in uni-directional and bi-directional
? 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
? Excellent clamping capability
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
V WM 5.8 V to 459 V
V BR uni-directional 6.8 V to 540 V
? Very fast response time
? Low incremental surge resistance
? Solder dip 275 °C max. 10 s, per JESD 22-B106
? AEC-Q101 qualified
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
V BR bi-directional
P PPM
P D
I FSM (uni-directional only)
T J max.
Polarity
Package
6.8 V to 440 V
400 W
1.5 W
40 A
175 °C
Uni-directional, bi-directional
DO-204AL (DO-41)
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy body over passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
meets JESD 201 class 2 whisker test
Note
? P4KE250CA to P4KE540A and P4KE250A to P4KE440CA for
commercial grade only
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
Peak pulse current with a 10/1000 μs waveform
(1)
(fig.1)
P PPM
I PPM
400
See next table
W
A
Power dissipation on infinite heatsink at T L = 75 °C (fig. 5)
Peak forward surge current 8.3 ms single half-sine wave uni-directional only (2)
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)
Operating junction and storage temperature range
P D
I FSM
V F
T J , T STG
1.5
40
3.5/5.0
- 55 to + 175
W
A
V
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T
A = 25 °C per fig. 2
(2) 8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V F = 3.5 V for P4KE220A and below; V F = 5.0 V for P4KE250A and above
Revision: 18-Sep-12
1
Document Number: 88365
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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