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参数资料
| 型号： | P4KE39C-HE3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 90K |
| 代理商： | P4KE39C-HE3/54 |
Vishay General Semiconductor
P4KE6.8 thru P4KE540A
Document Number 88365
07-Jun-06
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in Unidirectional and Bidirectional
400 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For unidirectional types the color band
denotes cathode end, no marking on bidirectional
types
DO-204AL (DO-41)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirection use C or CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
V(BR) Unidirectional
6.8 V to 540 V
V(BR) Bidirectional
6.8 V to 440 V
PPPM
400 W
PD
1.0 W
IFSM (Unidirectional only)
40 A
Tj max.
175 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) VF = 3.5 V for P4KE220(A) & below; VF = 5.0 V for P4KE250(A) & above
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak power dissipation with a 10/1000 s waveform (1) (Fig. 1)
PPPM
400
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
PD
1.0
W
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only (2)
IFSM
40
A
Maximum instantaneous forward voltage at 25 A for unidirectional only (3)
VF
3.5/5.0
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| P4KE39C-T | 功能描述:TVS 二极管 - 瞬态电压抑制器 bi-dir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P4KE39C-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode TVS Single Bi-Dir 31.6V 400W 2-Pin DO-41 T/R |
| P4KE39CTR | 制造商:World Products 功能描述: |
| P4KE39D-E3/54 | 制造商:Vishay Semiconductors 功能描述:400W,39V 3.5%,UNIDIR,AXIAL TVS |
| P4KE39-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 400W 39V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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