参数资料
型号: P600B-E3
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 6 A, 100 V, SILICON, RECTIFIER DIODE
封装: LEAD FREE, PLASTIC, CASE P600, 2 PIN
文件页数: 1/4页
文件大小: 312K
代理商: P600B-E3
P600A thru P600M
Document Number 88692
30-Aug-05
Vishay General Semiconductor
www.vishay.com
1
Case Style P600
General Purpose Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
6.0 A
VRRM
50 V to 1000 V
IFSM
400 A
VF
0.9 V, 1.0 V
IR
5.0 A
Tj max.
150 °C
Features
Low forward voltage drop
Low leakage current
High forward current capability
High forward surge capability
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Mechanical Data
Case: P600, void-free molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
P600A P600B P600D P600G
P600J
P600K
P600M
Unit
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current at
TA= 60 °C, 0.375" (9.5 mm) lead length (Fig. 1)
TL= 60 °C, 0.125" (3.18 mm) lead length (Fig. 2)
IF(AV)
6.0
22
A
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
400
A
Operating junction and storage temperature range
TJ, TSTG
- 50 to + 150
°C
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