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参数资料
| 型号： | P6KA10A/1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| 封装： | PLASTIC, DO-15, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 29K |
| 代理商： | P6KA10A/1 |
P6KA6.8 thru P6KA43A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88368
www.vishay.com
06-May-02
3
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (
°C)
1
10
100
Fig. 2 – Pulse Derating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1
s
1.0
s10s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
Fig. 5 – Steady State Power
Derating Curve
Non-repetitive Pulse
Waveform shown in Fig. 3
TA = 25°C
Fig. 6 - Maximum Non-Repetitive /Peak
Forward Surge Current
I FSM
—
Peak
Forward
Surge
Current
(A)
Number of Cycles at 60HZ
C
J
—
Junction
Capacitance
(pF)
10
100
1,000
6,000
10
1.0
100
200
V(BR) — Breakdown Voltage (V)
TJ = 25
°C
f = 1.0MHz
Vsig = 50mVp-p
10
100
200
TL = 75°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
0
1.25
2.5
3.75
5.0
0
75
25
100
125
150
175
200
PM
(A
V)
,Steady
State
Power
Dissipation
(W)
1.6 x 1.6 x 0.040"
(40 x 40 x 1mm)
Copper Heat Sinks
Fig. 4 – Typical Junction Capacitance
TL — Lead Temperature (
°C)
50
60HZ Resistive
or Inductive Load
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
L = 0.375" (9.5mm)
Lead Lengths
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相关代理商/技术参数 |
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| P6KA10A-E3/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6KA10A-E3/23 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6KA10A-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6KA10A-E3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6KA10A-E3/73 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 10V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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