参数资料
| 型号： | P6SMB36CAT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER BIDIRECT 600W 36V SMB |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 30.8V |
| 电压 - 击穿： | 34.2V |
| 功率（瓦特）： | 600W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 其它名称： | P6SMB36CAT3GOSDKR |
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ? C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ? C Measured Zero Lead Length (Note 2)
Derate Above 75 ? C
Thermal Resistance, Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ? C
Derate Above 25 ? C
Thermal Resistance, Junction ? to ? Ambient
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
T J , T stg
Value
600
3.0
40
25
0.55
4.4
226
? 65 to +150
Unit
W
W
mW/ ? C
? C/W
W
mW/ ? C
? C/W
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive
2. 1 ? square copper pad, FR ? 4 board
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
Symbol
Parameter
I PP
I
I R V RWM V BR V C
I PP
V C
V RWM
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I T
V C V BR V RWM I R
I T
V
I R
Maximum Reverse Leakage Current @ V RWM
V BR
I T
Q V BR
Breakdown Voltage @ I T
Test Current
Maximum Temperature Coefficient of V BR
I PP
Bi ? Directional TVS
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
Device
Marking
V RWM
(Note 4)
Volts
I R @
V RWM
m A
Breakdown Voltage
V BR Volts (Note 5)
Min Nom Max
@ I T
mA
V C @ I PP (Note 6)
V C I PP
Volts Amps
Q V BR
%/ ? C
C typ
(Note 7)
pF
P6SMB11CAT3G
P6SMB12CAT3G
P6SMB15CAT3G
P6SMB16CAT3G
P6SMB18CAT3G
P6SMB20CAT3G
P6SMB22CAT3G
P6SMB24CAT3G
P6SMB27CAT3G
P6SMB30CAT3G
P6SMB33CAT3G
P6SMB36CAT3G
P6SMB39CAT3G
P6SMB43CAT3G
P6SMB47CAT3G
P6SMB51CAT3G
P6SMB56CAT3G
P6SMB62CAT3G
P6SMB68CAT3G
P6SMB75CAT3G
P6SMB82CAT3G
11C
12C
15C
16C
18C
20C
22C
24C
27C
30C
33C
36C
39C
43C
47C
51C
56C
62C
68C
75C
82C
9.4
10.2
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
10.5
11.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
11.05
12
15.05
16
18
20
22
24
27.05
30
33.05
36
39.05
43.05
47.05
51.05
56
62
68
75.05
82
11.6
12.6
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
15.6
16.7
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
38
36
28
27
24
22
20
18
16
14.4
13.2
12
11.2
10.1
9.3
8.6
7.8
7.1
6.5
5.8
5.3
0.075
0.078
0.084
0.086
0.088
0.09
0.09
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
865
800
645
610
545
490
450
415
370
335
305
280
260
240
220
205
185
170
155
140
130
4. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. V BR measured at pulse test current I T at an ambient temperature of 25 ? C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data ? 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T J = 25 ? C
*Include SZ-prefix devices where applicable.
http://onsemi.com
2
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| P6SMB36CAT3G | 制造商:ON Semiconductor 功能描述:TVS DIODE 600W 36V 403A 制造商:ON Semiconductor 功能描述:TVS DIODE, 600W, 36V, 403A |
| P6SMB36CE3/TR13 | 制造商:Microsemi Corporation 功能描述:P6SMB36CE3/TR13 - Tape and Reel |
| P6SMB39 | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMB39A | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMB39A R4 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Uni-Dir 33.3V 600W 2-Pin SMB T/R |
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