参数资料
型号: P6SMB51AT3G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: TVS ZENER UNIDIR 600W 51V SMB
标准包装: 1
电压 - 反向隔离(标准值): 43.6V
电压 - 击穿: 48.5V
功率(瓦特): 600W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: SMB
包装: 标准包装
其它名称: P6SMB51AT3GOSDKR
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ° C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ° C Measured Zero Lead Length (Note 2)
Derate Above 75 ° C
Thermal Resistance from Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ° C
Derate Above 25 ° C
Thermal Resistance from Junction ? to ? Ambient
Forward Surge Current (Note 4) @ T A = 25 ° C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
I FSM
T J , T stg
Value
600
3.0
40
25
0.55
4.4
226
100
? 65 to +150
Unit
W
W
mW/ ° C
° C/W
W
mW/ ° C
° C/W
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive
2. 1 ″ square copper pad, FR ? 4 board
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted, V F = 3.5 V Max. @ I F
(Note 4) = 30 A, V F = 1.3 V Max. @ I F (Note 4) = 3 A) (Note 5)
I
Symbol
I PP
V C
V RWM
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I F
I R V F
I R
V BR
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
Q V BR
Test Current
Maximum Temperature Coefficient of V BR
I F
Forward Current
I PP
V F Forward Voltage @ I F
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non ? repetitive
duty cycle
http://onsemi.com
2
Uni ? Directional TVS
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