参数资料
| 型号： | P6SMB68AT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER UNIDIR 600W 68V SMB |
| 产品目录绘图： | 1SMB, P6SMB Series |
| 标准包装： | 10 |
| 电压 - 反向隔离（标准值）： | 58.1V |
| 电压 - 击穿： | 64.6V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 产品目录页面： | 2380 (CN2011-ZH PDF) |
| 其它名称： | P6SMB68AT3GOSDKR |
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series
APPLICATION NOTES
Response Time
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition
associated with the inductance of the device and the inductance
of the connection method. The capacitive effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating
voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces an
overshoot in the voltage across the equipment or component
being protected as shown in Figure 5. Minimizing this
overshoot is very important in the application, since the main
purpose for adding a transient suppressor is to clamp voltage
spikes. The SMB series have a very good response time,
typically < 1 ns and negligible inductance. However, external
inductive effects could produce unacceptable overshoot.
Proper circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z in is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25 ? C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or ambient
temperature rises above 25 ? C. The average power derating
curve normally given on data sheets may be normalized and
used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 m s pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
V
V in (TRANSIENT)
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V in (TRANSIENT)
V L
V L
V in
t d
t D = TIME DELAY DUE TO CAPACITIVE EFFECT
Figure 5.
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
t
Figure 6.
PULSE WIDTH
10 ms
1 ms
100 m s
t
0.01
0.1 0.2
0.5
1
10 m s
2 5 10
20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
http://onsemi.com
4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| P6SMB68AT3G | 制造商:ON Semiconductor 功能描述:ZENER DIODE |
| P6SMB68C | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMB68CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS SURF MT DO214AA RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMB68CA R4 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Bi-Dir 58.1V 600W 2-Pin SMB T/R |
| P6SMB68CA/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 68V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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