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参数资料
| 型号： | P6SMBJ48 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 4/5页 |
| 文件大小： | 124K |
| 代理商： | P6SMBJ48 |
TVS DioDeS
World Products Inc. 19654 Eighth Street East, Sonoma, CA 95476 | Phone (707) 996-5201 | Fax (707) 996-3380 | www.worldproducts.com
Rev.2.3 (10.11.07)
46 | Protection Products Catalog
P6SMBJ Series — 600 Watt Surface Mount
Electrical Characteristics (continued)
Part Number*
Uni
Part
Marking
Bi
Part
Marking
Rated
Standoff
Voltage
Vwm
Breakdown Voltage
Maximum
Stand By
Current
@VWM+
Id
10/1000μs
Maximum
Clamping
Voltage
@Ippm#
Vc Max
10/1000μs
Rated
Peak
Impulse
Current
Ippm#
Vbr (Volts)
@It
(Volts)
Min
Max
(mA)
(μA)
(Volts)
(Amperes)
P6SMBJ43
MS
CS
43
47.8
60.5
1
5
76.7
7.8
P6SMBJ43A
MT
CT
43
47.8
54.9
1
5
69.4
8.6
P6SMBJ45
MU
CU
45
50
63.3
1
5
80.3
7.5
P6SMBJ45A
MV
CV
45
50
57.5
1
5
72.7
8.3
P6SMBJ48
MW
CW
48
53.3
67.5
1
5
85.5
7
P6SMBJ48A
MX
CX
48
53.3
61.3
1
5
77.4
7.7
P6SMBJ51
MY
CY
51
56.7
71.8
1
5
91.1
6.6
P6SMBJ51A
MZ
CZ
51
56.7
65.2
1
5
82.4
7.3
P6SMBJ54
ND
DD
54
60
76
1
5
96.3
6.2
P6SMBJ54A
NE
DE
54
60
69
1
5
87.1
6.9
P6SMBJ58
NF
DF
58
64.4
81.6
1
5
103
5.8
P6SMBJ58A
NG
DG
58
64.4
74.6
1
5
93.6
6.4
P6SMBJ60
NH
DH
60
66.7
84.5
1
5
107
5.6
P6SMBJ60A
NK
DK
60
66.7
76.6
1
5
96.8
6.2
P6SMBJ64
NL
DL
64
71.1
90.1
1
5
114
5.3
P6SMBJ64A
NM
DM
64
71.1
81.8
1
5
103
5.8
P6SMBJ70
NN
DN
70
77.8
98.6
1
5
125
4.8
P6SMBJ70A
NP
DP
70
77.8
89.5
1
5
113
5.3
P6SMBJ75
NQ
DQ
75
83.3
106
1
5
134
4.5
P6SMBJ75A
NR
DR
75
83.3
95.8
1
5
121
4.9
P6SMBJ78
NS
DS
78
86.7
110
1
5
139
4.3
P6SMBJ78A
NT
DT
78
86.7
99.7
1
5
126
4.7
P6SMBJ85
NU
DU
85
94.4
119.2
1
5
151
3.9
P6SMBJ85A
NV
DV
85
94.4
108.2
1
5
137
4.4
P6SMBJ90
NW
DW
90
100
126.5
1
5
160
3.8
P6SMBJ90A
NX
DX
90
100
115.5
1
5
146
4.1
* = Add “C” or “CA” suffix for bidirectional device types.
+ = For Bidirectional Types Having VWM <= 10V, their ID limit is doubled.
#=SeeGeneralInformationforImpulseCurrentWaveform.
For Pb-Free add suffix – “F”
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相关代理商/技术参数 |
参数描述 |
|---|---|
| P6SMBJ480 | 功能描述:TVS 二极管 - 瞬态电压抑制器 408Vso 456Vbr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ480A | 功能描述:TVS 二极管 - 瞬态电压抑制器 408Vso 456Vbr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ480C | 功能描述:TVS 二极管 - 瞬态电压抑制器 408Vso 456Vbr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ480CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 408Vso 456Vbr RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| P6SMBJ48A | 制造商:World Products 功能描述: |
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